2SD1499 Search Results

2SD1499

Abstract: 2SB1063
Contextual Info: SavantIC Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation · APPLICATIONS ·For high power amplifier applications

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)

2SB1063

Abstract: 2SD1499
Contextual Info: Inchange Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING

OF IC 741

Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
Contextual Info: Power Transistors 2SD1499 2S D 1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m plifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U n it I mm 4.4m ax. 1 0 .2 m a x . ■ Features 2.9m ax • V ery goo d lin earity o f DC c u r re n t gain hhE

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

2SB5950

Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15

2SD2172

Abstract: 2SD1555 2SD1573 2SD1650 2SC2665 2sc2238 SD1577 2SD1225M 2SD1651 2SD1649
Contextual Info: 24 4 - m « tt T y p e No. ^ 2SD 1547 « Manuf. Ä 2SD 1548 2SD 1553 3K 2SD 1 554 > ^ E. ft SANYO TOSHIBA 1 NEC B Al HITACHI Ä ± ül F U J ITSU tö T MATSUS H I T A $ 2SD2252 2SD1850 ~*L 2SD1887 2SC4111 2£ 2SD1649 M S. 2SD1650 2SD1846 2SD1651 2SD1847 2SD1652

TT 2076

Abstract: 2SD1491 2SD1929 2SC3907 toshiba 2SD1407 2056 2SD2058 2SD1266 2SD2251 nec 258
Contextual Info: - 258 - m € Type No. 2SD 2056 2SD 2057 2SD 2058 * 2SD 2059 * 2SD 2060 2SD 2061 ^ 2SD 2062 2SD 2063 2SD 2064 2SD 2066 , 2SD 2067 2SD 2068 2SD 2069 2SD 2070 2SD 2071 2SD 2072 2SD 2073 2SD 2074 2SD 2075 2SD 2076 * 2SÖ 2077 2SD 2078 2SD 2079 2SD 2080 2SD 2081

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SD1460

Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691