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    2SB1063 Datasheets

    2SB1063 datasheet (14)

    Part ECAD Model Manufacturer Description Type PDF
    2SB1063 Panasonic High Power Amplifier Complementary Pair with 2SD1499 Original PDF
    2SB1063 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1063 Unknown Scan PDF
    2SB1063 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1063 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SB1063 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SB1063 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1063 Unknown Cross Reference Datasheet Scan PDF
    2SB1063 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB1063 Panasonic Power Transistors Scan PDF
    2SB10630P Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 100VCEO 5A TO-220F Original PDF
    2SB1063P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1063Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1063R Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
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    2SB1063 Datasheets Context Search

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    2SB1063

    Abstract: 2SD1499
    Text: Inchange Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , Product Specification 2SB1063 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors PACKAGE OUTLINE


    Original     		PDF 2SB1063 O-220Fa 2SD1499 -20mA 2SB1063 2SD1499

    2005 - 2SB1063

    Abstract: 2SD1499
    Text: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 , JMnic Product Specification 2SB1063 Silicon PNP Power Transistors CHARACTERISTICS Tj , 100-200 2 200 JMnic Product Specification 2SB1063 Silicon PNP Power Transistors


    Original     		PDF 2SB1063 O-220Fa 2SD1499 -100V; -20mA 2SB1063 2SD1499

    2SB1063

    Abstract: 2SD1499
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS ·Designed for high power amplification. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww , Semiconductor isc Silicon PNP Power Transistor 2SB1063 ELECTRICAL CHARACTERISTICS TC=25 unless


    Original     		PDF 2SB1063 2SD1499 -100V; -20mA; 2SB1063 2SD1499

    2SB1063

    Abstract: 2SD1499
    Text: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 , temperature -55~150 SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power , tolerance: ±0.15 mm) 3 2SB1063 -


    Original     		PDF 2SB1063 O-220Fa 2SD1499 -100V; -20mA 2SB1063 2SD1499

    2SB1013

    Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
    Text: - 60 - S « Type No. tt « Manuf. H !M SANYO M S TOSHIBA B a NEC B iL HITACHI « ± m FUJITSU « T MATSUSHITA H m MITSUBISHI □ - A ROHM 2SB 1013 V H. 2SA1160 2SB1068 2SB976 2SB1426 2SB 1014 «- S ß 2SA1020 2SB1116 2SB621 2SB1Q44M 2S8 1015 - M 'S 2SB1134 2SB1094 2SB941 2SB1370 2SB 1016 , ü 2 2SB1454 2SB1095 2SB1063 2SB1294 2SB 1017 S 3E 2SB1454 2SB1095 2SB942A 2SA1635 , 2SB1063 2SB1294 2SB 1040 ^ B m. 2SB926 2SA1243 2SB1182 2SB 1041 - □ -A 2SA1708 2SA1315 2SB984


    OCR Scan     		PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564

    2SB1063

    Abstract: 2SD1499
    Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type High Power Amplifier Complementary Pair with 2SD1499 Package Dimensions Features in (Iife) ia6 areff orsifAy operaifornj • High transition frequency (fT) • "Full Pack" package for simplified mounting on a heat sink with one screw Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -100 v : Collector-emitter voltage Vceo -100 v Emitter-base voltage Ve bo Peak collector current Icp _8 A Collector


    OCR Scan     		PDF 2SB1063 2SD1499 -10-V, 2SB1063 2SD1499

    Not Available

    Abstract: No abstract text available
    Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 ■Features • V ery good linearity of DC current gain (Ii f e ) • Wide area of safety operation (ASO) • High transition frequency (ft) • “Full Pack” package for simplified mounting on a heat sink with one screw ■Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage V CBO -1 0 0 V


    OCR Scan     		PDF 2SB1063 2SD1499 13SaS2

    2SB897

    Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
    Text: 2SB897 2SB1469 2SB 1479 A 2SB887 2SB897 2SB1470 2SB 1481 2SB1227 2SB1430 2SB1063 2SB , 2SB1063 2SB 1496 □ —A 2SB1273 2SB1416 2SB 1497 b a 2SA1707 2SA1020 2SB1446 2SB1517 2SB


    OCR Scan     		PDF 2SA1709 2SA1704 2SB1434 2SA1692 2SB1117 2SB1452 2SA1832 2SA1836 2SA1774 2SB881 2SB897 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973

    2SB1063

    Abstract: 2SD1499
    Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2SD1499 F e a tu re s · V e r y g o o d lin e a r ity o f D C c u r r e n t g a in · W id e a r e a o f s a f e ty o p e r a tio n (A S O ) · H ig h t r a n s itio n fr e q u e n c y (ft) · " F u ll P a c k " p a c k a g e fo r s im p lifie d m o u n tin g o n a h e a t s in k w ith o n e screw 0.5max.1.5max. . P a c k a g e D im e n s io n s U n it m m 1 0


    OCR Scan     		PDF 2SB1063 2SD1499 bR3SB52 2SB1063 2SD1499

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: 375 2SB942/A 2SD1267/A 2SD1517 : A2SD2549 2SD2157 2SB1063 2SD1499 2SB930/A 2SD1253/A 2SB1173/A , 2SB1050 2SB1052 2SB1054 2SB1063 2SB1070/A 2SB1071/A 2SB1073 2SB1108J 2SB1148/A 2SB1154 2SB1155 2SB1156


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    2003 - 2SB1063

    Abstract: 2SD1499
    Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Symbol Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation -100 VCEO -100 -5 A , RoHS Directive (EU 2002/95/EC). 2SB1063 PC Ta IC VCE (1) 40 20 -6 TC


    Original     		PDF 2002/95/EC) 2SB1063 2SD1499 SC-67 O-220F-A1 2SB1063 2SD1499

    2SB1039

    Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
    Text: -0.1 -0.0002 2SB1062 KT LF A -15 -10 -0.5 0. 6 -0.1 -10 100 350 -2 -0.5 -0.2 -1 -0.4 -0.008 2SB1063 , )ftB970 2SB1062 20* -5 -0. 5 170» 2SD1499 (TO—220F Ça) BCE 2SB1063 10* -5 -0. 5 50


    OCR Scan     		PDF 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SD1499 2SB1063 2SD1505 O-220ABÂ 2SB1039 2SB1045 2SB1038 2SB1035

    OF IC 741

    Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
    Text: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power Amplifier ■Package Dimensions Complementary Pair with 2SB1063 ■Features • Very good linearity of DC current gain (hhE) • Wide area of safety operation (ASO) • High transition frequency (fT) • "Full Pack" package for simplified mounting on a heat sink with one screw Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO 100 V Collector-emitter voltage


    OCR Scan     		PDF 2SD1499 2SB1063 001b743 OF IC 741 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063

    B1548

    Abstract: 2SB1299A
    Text: 2SD1743/A 2SD812 2SD2157 2SB1063 2SD1499 2SB1191/A 2SD1770/A 2SB1192/A 2SD1772/A 2SB940/A 2SD1264/A


    OCR Scan     		PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: 100 5 <2 3 300 2SB1063 i 2SD1499 150/180 1 <1 0.5 50 2SD1770/A 2SB1192/A I 2SD1772/A 2SB1191


    OCR Scan     		PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    2003 - 2SB1063

    Abstract: 2SD1499
    Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating VCBO -100 VCEO -100 VEBO -5 IC -5 ICP -8 A 40 2.54±0.3 A Peak collector current 0.5+0.2 ­0.1 0.8±0.1 V Collector current 16.7±0.3 V Emitter-base voltage (Collector open) 1.3±0.2 , to 120 100 to 200 Publication date: February 2003 SJD00039AED 1 2SB1063 PC Ta IC


    Original     		PDF 2SB1063 2SD1499 2SB1063 2SD1499

    2003 - 2SB1063

    Abstract: 2SD1499
    Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter 14.0±0.5 1.3±0.2 1.4±0.1 0.5+0.2 ­0.1 0.8±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Absolute Maximum , to 80 60 to 120 100 to 200 Publication date: February 2003 SJD00039AED 1 2SB1063


    Original     		PDF 2SB1063 2SD1499 2SB1063 2SD1499

    2SA1302 TOSHIBA

    Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
    Text: 2SB1063 2SB 1169 fé T 2SB1201 2SB 1170 fé T 2SB1201 2SB 1171 fé T 2SA1552


    OCR Scan     		PDF 2SB1267 2SB937A 2SB1165 2SB933 2SB817 2SB863 2SA1227A 2SA1302 2SB1371 2SB776 2SA1302 TOSHIBA 2SA1302 Toshiba 2Sa1302 SB 1156 2SB1371 mitsubishi 1183 2SB1407 2SB1201

    2SA1885

    Abstract: 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940
    Text: 2SB1063 2SB1513 2SA 1841 • a m 2SB1195 2SB1549 2SA 1843 a a 2SB1417 2SB1358 2SA 1844 a


    OCR Scan     		PDF 2SB892 2SA1020 2SB1433 2SB1434 2SA1532 2SA1792 2SB1413 2SA1793 2SB1447 2SB946 2SA1885 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940

    Not Available

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 2.7±0.2 φ 3.1±0.1 Parameter Symbol Rating VCBO −100 VCEO −100 V Emitter-base voltage (Collector open , RoHS Directive (EU 2002/95/EC). 2SB1063 PC  Ta IC  VCE −6 TC=25˚C VCE=â


    Original     		PDF 2002/95/EC) 2SB1063 2SD1499

    2SD1499

    Abstract: 2SB1063
    Text: SavantIC Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation · APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO


    Original     		PDF 2SD1499 O-220Fa 2SB1063 O-220Fa) 2SD1499 2SB1063

    2SB557 TOSHIBA

    Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
    Text: m 2SB554 2SB 601 B m 2SB884 2SB727(K) 2SB1063 2SB1339 2SB 604 & T 2SB507 2SB596 2SA1069


    OCR Scan     		PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB546A 2sa483 2SB554 2SB54 2SB557 2SB857

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: _ fifi _ Sí S Type No. a « Manuf. = m SANYO S ^ TOSHIBA S ■NEC B SL HITACHI « ± il FUJITSU fö T MATSUSHITA H « MITSUBISHI □ — A ROHM 2SB 1286 □ —A 2SB884 2SB679 2SB1105 2SB949 2 S B 1287 □ -A 2SB1226 2SB1402 2SB949A 2SB 1288 Í2 T 2SB1131 2SA1431 2SB1117 2SB1306 2SB 1 289 □ —A 2SB920L 2SB753 2SB946 2SB 1290 _ □ —A 2SB1018 2SB946 2SB 1291 □ —A 2SA1289 2SA1012 2SB747 2S6 1292 — □—A 2SA1469 2SA1307 2SB1063 2SB 1293 □ —A


    OCR Scan     		PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    d1266a

    Abstract: D1271A D1985A D2374 SB945 d1266 d1264a 1071AI B1604 2SD1273 P
    Text: <0.5 <2 <1 <1 <1 2SB942/A: 2 S D 12 67 /A i 2S D 1517 2SD812 2SD2157 2SB1063 i 2SD1499 2S B 1192/A


    OCR Scan     		PDF 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SA1817 2SC4717 2SA1375 2SC2924 2SC5121 d1266a D1271A D1985A D2374 SB945 d1266 d1264a 1071AI B1604 2SD1273 P

    1999 - 2SB1063

    Abstract: 2SD1499
    Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm q 0.7±0.1 s Absolute Maximum Ratings (TC=25°C) Parameter Symbol Ratings 4.2±0.2 7.5±0.2 16.7±0.3 2.7±0.2 3.1±0.1 4.0 q 14.0±0.5 q Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the


    Original     		PDF 2SD1499 2SB1063 2SB1063 2SD1499

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