2SD1275 Search Results

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB0949

Abstract: 2SB0949A 2SD1275 2SD1275A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 5.5±0.2 7.5±0.2 2.7±0.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A

2SD1275

Abstract: 2SD1275A 2SB949 2SB949A
Contextual Info: Product Specification www.jmnic.com 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949,2SB949A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification

2Sd1275

Abstract: 2SD1275A
Contextual Info: Inchange Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949/949A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING

Contextual Info: Power T ransistors 2SB949, 2SB949A 2SB949, 2SB949A Silicon NPN Epitaxial Planar Darlington Type Package Dimensions Power Amplifier, Switching Complementary Pair with 2SD1275, 2SD1275A •Features • High DC current gain Iif e • High speed switching • “Full Pack” package for simplified mounting on a heat sink with one

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A

2SB949

Abstract: 2SB949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB949 and 2SB949A Unit: mm ● • Absolute Maximum Ratings Parameter 0.7±0.1 TC=25˚C Symbol Collector to 2SD1275 base voltage

2SB0949

Abstract: 2SB0949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD1275 Collector to emitter voltage 2SD1275 Symbol Rating Unit VCBO 60 V 2SD1275A

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

2SD1275

Abstract: 2SD1275A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB949/949A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN

2SD1275

Abstract: 2SB949 2SB949A 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A 2S D 1275, 2S D 1275A Package D im ensions Silicon NPN Triple-D iffused Planar Darlington Type Power A m plifier C om plem entary Pair with 2SB949, 2S B949A • Features • H igh DC c u r re n t gain hre • H igh s p e e d sw itch in g

Contextual Info: Power Transistors 2SD1275, 2 SD1275A 2SD1275, 2SD1275A Package D im ensions S ilico n N P N Triple-D iffused P la n a r Darlington Type Power A m plifier C om plem entary Pair with 2SB949, 2SB949A • Features • High DC current gain hre • High speed switching

2SB0949

Abstract: 2SB0949A 2SD1275 2SD1275A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 5.5±0.2 7.5±0.2 2.7±0.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A

2SD1275A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings Ta = 25°C Symbol Collector-base voltage 2SD1275 (Emitter open) 2SD1275A

IC data book free download

Abstract: common collector PNP darlington power pack ft 103 Vbe 8 V DARLINGTON diode 104 high current darlington transistor SILICON COMPLEMENTARY transistors darlington thermal cutoff
Contextual Info: Power Transistors 2SB0949 2SB949 , 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 Parameter Collector-base voltage

2SD1275

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings Ta = 25°C Symbol Collector-base voltage 2SD1275 (Emitter open) 2SD1275A

2SB0949

Abstract: 2SB0949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-base voltage Emitter open Symbol 2SD1275 VCBO 2SD1275A Rating Unit 60 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 5.5±0.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A VCBO VCEO Emitter-base voltage (Collector open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.