2SD157 Search Results

2SD1577

Abstract: transistor 2sd1577 08af equivalent 2sd1577
Contextual Info: Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA

2SD1577

Contextual Info: SavantIC Semiconductor Product Specification 2SD1577 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1

Contextual Info: 2SD1572, 2SD1600 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1091 Outline TO -220A B 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1572 2SD1600 Unit Collector to base voltage ^C B O

2SD1572

Abstract: Hitachi DSA00164
Contextual Info: 2SD1572, 2SD1600 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1091 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 2.2 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol

TRANSISTOR XL08

Abstract: XL08 tr xl08 988u 2SD1579 T460
Contextual Info: NEC Ì Ì T / \ f S ilic o n Z T r a n s is to r 2SD1579 r N P N X tf 9 3 V 1-7 |J > “ h > - ^ 3 S 5 S ffiJS iftW * i t « , « J S * x iffl NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use 2SD1579ÌÌ 3 V ? 9 •

2SD157

Abstract: 2SD1576
Contextual Info: Power Transistors 2SD1576 2SD1576 Silicon NPN Triple-Diffused Junction Mesa Type • Package D im ensions H orizontal D eflection O utput ■ Features U nit mm 5 2max. 15.5m ax. 6.9rr • High b re a k d o w n v o lta g e and high reliability by g lass p a ssiv atio n

2SC3560

Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
Contextual Info: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.

2SB1091

Abstract: 2SD109 2SD1572
Contextual Info: HITACHI 2SB1091-SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1572 < t. Base 2. C o llc tta r tiranni Í . lim ili« lAW j «kC Dimensions in mm ( ty p .) (JEDEC TO-220AB) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item

08af

Abstract: 2SD1577 equivalent 2sd1577
Contextual Info: Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA

2sd1572

Abstract: 2SD157
Contextual Info: 2SD1572, 2SD1600 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1091 Outline 3 Absolute Maximum Ratings T a = 2 5 ° C Ratings Item Symbol 2SD1572 2SD1600 Unit Collector to base voltage ^G B O 60

2SB1091

Contextual Info: ! HITACHI 2 S B 1 0 9 1 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1572 ! Bave 2 CtMkcm tiling? * Kmiwer O ilm en « « ?!* in m m ? J6D EC TO-220AB) • ABSOLUTE MAXIMUM RATINGS <T:»=25'X i hem S ym bol C o lle cto r to t e c voltage

Contextual Info: 2SD1572, 2SD1600 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1091 Outline TQ -220AB Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1572 2SD1600 Unit Collector to base voltage ^C B O

2SD1577

Abstract: 2001H
Contextual Info: Power Transistors 2SD1577 2SD 1577 Silicon NPN Triple-Diffused Junction Mesa Type Horizontal D eflection O utput • Package D im ensions U n it ! mm ■ Features 15.5 n • High breakdow n voltage and high reliability by glass passivation • High speed switching

2SD1575

Abstract: IC 766
Contextual Info: Power Transistors 2SD1575 2S D 1575 Silicon NPN Triple-Diffused Junction Mesa Type H orizontal D eflection O utput • Package D im ensions Unit ! mm ■ Features • High breakdow n voltage and high reliability by glass passivation • High speed switching

2SD1572

Contextual Info: 2SB1091 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1572 Outline Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -6 0 V Collector to em itter voltage

Contextual Info: 2SB1091 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1572 Outline Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBG -6 0 V Collector to em itter voltage

2SB1093

Abstract: 2SD1579 dumper diode
Contextual Info: NPN SILICON DARLINGTON TRANSISTOR 2SD1579 DESCRIPTION The 2SD1579 is a darlington transistor including a dumper diode at E-C. PACKAGE DIMENSIONS It is suitable for general driving use, such as hammer, solenoid, in millimeters inches lamp or motor. FEATURES

2SC3560

Abstract: 2SC3309 2SC3310 2SC3497 2SC3561 2SD1571 2SC35S9
Contextual Info: Powered by ICminer.com Application MAX. M r NPN SWITCHING REG. ! I I PNP •c A 2SC3309 i' 2SC3560 ! _ ;. .m m rm x .T. 2SC3561 j 2SD1571 ) 2 3 2SC3559 | Pc Tc=25°C (W) ' ; hFE VcE(sat) MAX. Cob TYP. V ce (V) >C (A) (V) 'c (A) 'B

2SD1571

Abstract: NPN VCEO 800V 8 pin ic
Contextual Info: SavantIC Semiconductor Product Specification 2SD1571 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching ·High voltage:VCBO=800V Min APPLICATIONS ·High voltage switching applications

2SD2356

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for TV and Monitor Display Package (No.) Applica­ tion VcBO ic tf max. (V) (A) 0“S) 5 0.3 10 0.3 0.3 1 10 0.5 1.5 0.8 2SD2310 1.5 1 2SD1734 2 1 2SD1575 2.5 0.8 3 0.8

Contextual Info: P o w er T ra n s is to rs 2SD1577 2SD1577 Silicon NPN Triple-Diffused Junction Mesa Type • Package D im ensions H orizontal D eflection O utput U n it ! mm ■ Features 15.5n 5 .2 m a x . 6.9n • High b re a k d o w n v o ltag e and high reliab ility by g lass p a ssiv atio n

2SD1571

Contextual Info: 2SD1571 SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm FEATURES: . High Voltage : VcBO=800V . Low VcE sat : vCE(sat)=I-OV (Max.) (lc=0.5A, Ib =0.05A) . High Speed Switching : tf=1.Oa s (Max.) . T0-220 Isolation Package which Require Neither

Hitachi DSA002751

Contextual Info: 2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1572 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 3.5 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1091

Abstract: 2SD1572 2SD1600
Contextual Info: HITACHI 2SD1572, 2SD1600 S IL IC O N N P N T R IP L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2SB1091 ! S j g| ii H - j - T 3Í O* I 1 1. Base 2. Collet ior Iflangc 3 . F ,m it c r (Dimension* in rrtm)