2SD109 Search Results

2SD1092

Abstract: TCS5C
Contextual Info: 2SD1092 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in m m 03.Z±O.2 FEATURES : . Excellent Wide 80 W . S e c Safe Operating Area at Tc=25°C . I n c l u d e d A b a l a n c h e Di o d e : . High DC Current Gain : h F E — 500

2SD1092

Abstract: SC-65
Contextual Info: NPN SILICON DARLINGTON TRANSISTOR 2SD1092 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25 C)

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

2SD1093

Contextual Info: 2SD1093 S ILIC O N NPN TR IPLE D IFFU SED y U =3 > NPN HIGH VOLTAGE POWER S W ITC H IN G 1 . — 2 . X ì ••/ ? 7, : B a s e ! E m itte r 3 . r? u J 9 • C o lle c to r {*r — X C a se ) ( D i m e n s i o n s in m m ) (JEDEC T O -3 ) A B S O L U T E MAXIMUM R A TING S ( T a = 25°C)

2SD1092

Contextual Info: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR 2 S D 1 092 SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. , 2.0 Excellent Wide Safe Operating Area. (80W-S at Te = 25°C) Included Avalanche Diode : V z = 5 5 ^ | qy High DC Current Gain : hFE = 500 (Min.) (Tc = 25°C)

1S1888X4

Contextual Info: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS 2 S D 1 092 Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. 15.9 m AX. Excellent Wide Safe Operating Area. (80W*$ at Tc = 25°C) Included Avalanche Diode : V z = 5 5 ^ J qy

Contextual Info: 2SD1094 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1090

Contextual Info: 2SD1090 TOSHIBA 2 S D 1 090 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS COLOR TV POWER REGULATOR APPLICATIONS • • • High Voltage : Vc b O = 180 V High DC Current Gain : hjpg — 500 (Min.) Large Collector Power Dissipation Capability : Pc = 80 W

2SD1090

Contextual Info: 2SD1090 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm COLOR TV POWER REGULATOR APPLICATIONS. 159MAX. JZ3.8±Q2 FEATURES: . High Volt a g e : V C E O =180V . High DC Current Gain : h p E= 5 0 0 M i n . ii m . Large Collector Power D i s s ipation Capability

Contextual Info: TOSHIBA 2SD1092 T O S H IB A TRA N SIST O R 2 S D 1 092 SILICON NPN D O U BLE D IFFUSED T Y PE PCT PROCESS Unit in mm P O W E R R EG U LA T O R FOR LINE O P ER A T E D TV. 1 5 .9 M A X . • • • • SS Excellent Wide Safe Operating Area. (80W'S at Tc = 25°C)

Contextual Info: 2SD1090 TOSHIBA 2 S D 1 090 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS COLOR TV POWER REGULATOR APPLICATIONS • • • High Voltage : VcBO = 180 V High DC Current Gain : hpg = 500 (Min.) Large Collector Power Dissipation Capability : P c = 80 W

2SD1090

Contextual Info: 2SD1090 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 090 COLOR TV POWER REGULATOR APPLICATIONS • • • High Voltage : V c b O - 180 V High DC Current Gain : hjpg = 500 (Min.) Large Collector Power Dissipation Capability : P c = 80 W

transistor npn 2sd1090

Contextual Info: TOSHIBA 2SD1090 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 090 COLOR TV PO W ER REGULATOR APPLICATIONS. U nit in mm 15.9 m AX. • High Voltage : V q b O=1SOV • High DC C urrent Gain : h]TE = 500 (Min.) • Large Collector Power Dissipation Capability : P(j = 80W

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

2SD1094

Contextual Info: 2 S D ->y=i> 1 9 4 =mmm} NPN S IL IC O N NPN T R IP L E D IF F U S E D HIGH V O L T A G E P O W E R S W IT C H IN G Ü M E .W tiZ'f — X B ase E m itter C ollector *r — X (C ase) (D im ensions in mm) (JED EC T O - 3 ) A B S O L U T E M A X IM U M R A T IN G S ( T a = 25°C)

MJE1100

Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70

SKC10C75

Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45