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2SD103 Datasheets (96)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD103	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	44.5KB	1
2SD103	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	41.73KB	1
2SD103	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.15KB	1
2SD103	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	38.37KB	1
2SD103	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	88.33KB	1
2SD103	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.47KB	2
2SD103	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	40.92KB	1
2SD103	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.27KB	1
2SD103	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	52KB	1
2SD103	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	32.79KB	1
2SD103	Unknown	Cross Reference Datasheet	Scan	PDF	38.73KB	1
2SD103	Toshiba	Japanese Transistor Data Book	Scan	PDF	178.12KB	6
2SD103	Toshiba	Silicon NPN Diffused Junction Transistor	Scan	PDF	52.11KB	1
2SD1030	Panasonic	Silicon NPN epitaxial planer type	Original	PDF	36.6KB	2

2SD1030	Panasonic	NPN Transistor	Original	PDF	46.84KB	3
2SD1030	Panasonic	Silicon NPN epitaxial planer type	Original	PDF	49.04KB	3
2SD1030	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.05KB	1
2SD1030	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	88.78KB	2
2SD1030	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	32.02KB	1
2SD1030	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	110.3KB	2

2SD103 Price and Stock

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Renesas Electronics Corporation 2SD1033-E1-AZ Trans GP BJT NPN 150V 2A 2000mW 3-Pin(2+Tab) TO-252 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SD1033-E1-AZ		3,500		295	1 - 10 - 100 - 1000 $1.06 10000 $0.94	Buy Now
Rochester Electronics	2SD1033-E1-AZ		3,500		1	1 - 10 - 100 $1.02 1000 $0.85 10000 $0.75	Buy Now
Samtec Inc S2SD-10-30-L-19.10-DR-NDX - Bulk (Alt: S2SD-10-30-L-19.10-DR-NDX)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S2SD-10-30-L-19.10-DR-NDX	Bulk		3 Weeks	1	1 $19.82 10 $19.82 100 $15.23 1000 $11.82 10000 $11.82	Buy Now
Sager	S2SD-10-30-L-19.10-DR-NDX				1	1 $20.92 10 $19.81 100 $16.22 1000 $15.43 10000 $15.43	Buy Now
Master Electronics	S2SD-10-30-L-19.10-DR-NDX					1 $27.67 10 $24.69 100 $16.67 1000 $15.84 10000 $15.84	Buy Now
Samtec Inc T2SD-10-30-L-03.00-S Cable Assembly Discrete Wire 0.076m 30AWG 20 POS Discrete Wire Housing HDR - Bulk (Alt: T2SD-10-30-L-03.00-S)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	T2SD-10-30-L-03.00-S	Bulk		3 Weeks, 1 Days	1	1 $7.89 10 $7.89 100 $5.73 1000 $4.94 10000 $4.42	Buy Now
Sager	T2SD-10-30-L-03.00-S				1	1 $8.45 10 $7.81 100 $6.17 1000 $5.85 10000 $5.85	Buy Now
Master Electronics	T2SD-10-30-L-03.00-S					1 - 10 $10.49 100 $6.90 1000 $5.50 10000 $5.50	Buy Now
Samtec Inc S2SD-10-30-L-04.50-DS-NUS Cable Assembly Discrete Wire 30AWG 0.11m 20 Position Discrete Wire Housing to 20 Position Discrete Wire Housing Receptacle-Receptacle - Bulk (Alt: S2SD-10-30-L-04.50-DS-NUS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S2SD-10-30-L-04.50-DS-NUS	Bulk		2 Weeks, 3 Days	1	1 $17.99 10 $17.99 100 $13.39 1000 $11.03 10000 $11.03	Buy Now
Sager	S2SD-10-30-L-04.50-DS-NUS				1	1 $18.15 10 $17.18 100 $14.27 1000 $13.65 10000 $13.65	Buy Now
Master Electronics	S2SD-10-30-L-04.50-DS-NUS					1 $24.50 10 $21.86 100 $14.66 1000 $14.01 10000 $14.01	Buy Now
Samtec Inc S2SD-10-30-L-19.68-DR-NDX Cable Assembly Discrete Wire 0.5m 30AWG 20 POS Discrete Wire Housing to 20 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: S2SD-10-30-L-19.68-DR-NDX)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S2SD-10-30-L-19.68-DR-NDX	Bulk		2 Weeks, 6 Days	1	1 $20.00 10 $20.00 100 $15.37 1000 $11.79 10000 $11.79	Buy Now
Sager	S2SD-10-30-L-19.68-DR-NDX				1	1 $21.12 10 $19.99 100 $16.37 1000 $15.57 10000 $15.57	Buy Now
Master Electronics	S2SD-10-30-L-19.68-DR-NDX					1 $27.93 10 $24.92 100 $16.82 1000 $15.99 10000 $15.99	Buy Now

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2SD103 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB812 Abstract: 2SD1032 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications	Original	2sb812 2sd1032 -30ma	PDF
2SB187 Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150	Original	2sd101 2sd102 2sd103 2sd104 +142sd105 2sd106 2sd107 2sd108 2sd109 2sd110 2sb187 2sb178 2sd118 2sd188 2sd128 2sd111 2sb178a 2sd123	PDF
2SD1030 Abstract: 581 transistor Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 • Features ● ● 1.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage	Original	2sd1030 581 transistor	PDF
2SD1030 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE	Original	2002/95/ec 2sd1030	PDF
2SD1030 Abstract: VEBO-15V Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO	Original	2sd1030 unit1200 vebo-15v	PDF
2SD1030 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an W is k y	Original	2002/95/ec 2sd1030	PDF
Contextual Info: Transistors IC SMD Type Product specification 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15	Original	2sd1033 o-252 500ma	PDF
2SD1037 Abstract: MT200 Contextual Info: Product Specification www.jmnic.com 2SD1037 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications	Original	2sd1037 mt-200 mt200	PDF
2SD1033 Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1	Original	2sd1033 o-252 500ma	PDF
Contextual Info: 2SD1031 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)120 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2sd1031	PDF
2SD103 Abstract: transistor mp IC marking jw Contextual Info: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES	OCR Scan	2sd1033 2sb768 i-1209 2sd103 +2transistor mp ic marking jw	PDF
2SD1030 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2 5˚	Original	2002/95/ec 2sd1030	PDF
B1003 Abstract: TEB-1002 2SD1033 TEB-1014 MEI Semiconductors 2SB768 MEI-1202 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1033 is designed fo r Color TV Vertical Deflection Output, PACKAGE DIMENSIONS in m illim eters especially in Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 150 V	OCR Scan	2sd1033 2sb768 iei-1209 b1003 +4teb-1002 teb-1014 mei semiconductors mei-1202	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 2 1 di p Pl lan nclu	Original	2002/95/ec 2sd1030	PDF

2SB768 Abstract: 2SD1033 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1033 is designed for Color TV vertical deflection output, +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High Voltage VCEO = 150 V • Complement to 2SB768	Original	2sd1033 2sb768	PDF
hfe1 Abstract: 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications.	Original	2sd1032 2sb812 hfe1 60v transistor npn 3a +1switching transistor 30v npn	PDF
IGNITOR Z 400 M diagram Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8 Contextual Info: PANASONIC INDL/ELEK-CSEtllJ 7EC D \| 1 1 3 5 6 5 M □ 7 ^ 3^ / / \| 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^	OCR Scan	2sd1032 2sd1032a 2sb812 2sb812a +5ignitor z 400 m diagram 2sd1043 ic 78 ic4a ic t 4a 8	PDF
Contextual Info: SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR M P -3 DESCRIPTION 2SB768 designed fo r Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • High Voltage VCEO • —150 V • Complement to 2SD1033	OCR Scan	2sb768 2sd1033	PDF
5841a Abstract: 2SD1033 k1984 2SB768 Contextual Info: データ・シートシリコン・パワー・トランジスタ Silicon Power Transistors 2SD1033 NPN三重拡散形シリコン・トランジスタカラーテレビ垂直偏向出力用特徴外形図（単位：mm） ★ 6.5 ±0.2 5.0 ±0.2 V コレクタ − エミッタ間電圧 VCEO	Original	2sd1033 o-251mp-3 cycle50 2sd10332sb768 +72sd1033ic o-252mp-3z d18285jj3v0ds003 tc-5841a 5841a k1984 2sb768	PDF
2sd1037 Contextual Info: SavantIC Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications	Original	2sd1037 mt-200	PDF
2SD1034A Abstract: 2SD1034 Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1034A INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS a-04.0 ± a 3 MOTOR CONTROL APPLICATIONS. DEEP 2.5Ì0.4 4 MIN. FEATURES: . High Voltage : V c e SUS =450V	OCR Scan	2sd1034a 300iis 500kg 2sd1034	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE	Original	2002/95/ec 2sd1030	PDF
2SD1030 Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO	Original	2sd1030	PDF
2SD1030 Contextual Info: Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat	Original	2sd1030	PDF

2SD103 Search Results

2SD103 Datasheets (96)

2SD103 Price and Stock

Renesas Electronics Corporation 2SD1033-E1-AZ

Samtec Inc S2SD-10-30-L-19.10-DR-NDX

Samtec Inc T2SD-10-30-L-03.00-S

Samtec Inc S2SD-10-30-L-04.50-DS-NUS

Samtec Inc S2SD-10-30-L-19.68-DR-NDX

2SD103 Datasheets Context Search

2SB812

2SB187

2SD1030

2SD1030

2SD1030

2SD1030

2SD1037

2SD1033

2SD103

2SD1030

B1003

2SB768

hfe1

IGNITOR Z 400 M diagram

5841a

2sd1037

2SD1034A

2SD1030

2SD1030