2SD118 Search Results

2SD1185

Contextual Info: SavantIC Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SD1189F

Abstract: 2SB891F
Contextual Info: SavantIC Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB891F

Abstract: 2SD1189F
Contextual Info: Inchange Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SD118

Abstract: 2SD1187
Contextual Info: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0

2SD1189F

Abstract: 1189f
Contextual Info: N "7 /Transistors 2SD1189F 2SD 1189F NPN y ' j n > h 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé ü Î& ïi^ iS lïffl/L o w Freq. Power Amp. • W ß - = J - i i l 2 / D i n » n * io n 8 U n il : m m > K T ilb tlT iiU , m 3. 2± 0.2 « ¿ 3.3

2sd1187

Abstract: 2SD118
Contextual Info: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SW ITCHING APPLICATIONS DC-DC CONVERTER A N D DC-AC INVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ^3.2 ±0.2 Low Collector-Emitter Saturation Voltage : V qe sat = 0-5V

2SD1180

Contextual Info: SavantIC Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1

2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1

Contextual Info: 2SD1186 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.5k I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1187

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1187 INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS Unit in mm OC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS 159 MAX. 03.Z±Q.Z FEATURES: . Low Collector-Emitter Saturation Voltage : V C E sat =0.5V (Max.) (IC=6A)

2sd1187

Abstract: ed general semiconductor 4-00J1
Contextual Info: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ¿3.2 ±0.2 pi • Low Collector-Emitter Saturation Voltage

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

2SD1189

Abstract: 2SB891 transistor 2a 20v 5w Transistor 2SD1189 Transistor 126m
Contextual Info: ROHM CO LT» 40E ]> 7020^ □ 00SÖ2ci 2 / T ransistors IRHM 2SD1189 7 = 3 3 - o s r 7 V - ^ NPN y>;=i> h y 's y Z Z MMi &WjjliiltlSRi/Low Freq. Power Amp. Epitaxial Pianar NPN Silicon Transistor 2 • m • ÿ fJ ë v H ilS I/’Dimensions Unit : mm) I l g f f i b ' t - J l '

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

Contextual Info: 2SD1187 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS Unit in mm DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS 15.9 MAX , 0Ü 2±a2 FEATURES: . Low Collector-Emitter Saturation Voltage : VcE sat =0.5V (Max.) (Ic=6A)

PA100

Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9

Contextual Info: T O S H I B A { D I S C R E T E / O P 9097250 TOSHIBA T O } S b D E ^ O T T S D D D D f l f l 4 7 0 7 3 ï~/ 3 5 òC 07884 DISC RE TE /O PT O> Z 2SD1187 SILICON NPN TRIPLE DIFFUSED TYPE_ INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS Unit in iran

Contextual Info: TOSHIBA 2SD1187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE S D 2 1 1 8 7 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS / V 15-9MAX. • Low Collector-Emitter Saturation Voltage : V q e sat = 0-5V

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1185

Contextual Info: Inchange Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

Contextual Info: > v 7 $ /Transistors h 2SD1189 NPN v 'J H > h 7 > y 7 ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • 1 K T ? s t> n T * > ‘j, M if'f'WiT \ 4 >j v ; V d i - r • W f^ S E I/D im e n s io n s U n it: mm) itfe $>-5 o 2) VCE = 32V lc= 2 A , PC= 5 W $ -f

2Sd1187

Contextual Info: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH PO W ER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .9 M A X . ' • Low Collector-Emitter Saturation Voltage : V ç e sat = 0.5V

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015