2SB1277 Search Results

2SB1277

Contextual Info: 2SB1277 Transistor, PNP Features Dimensions Units : mm • available in FTL TL2 package • large output power, lCM = -3 A, Pc = 0.75 W 2SB1277 (FTL TL2) • low saturation voltage, typically VcE(sat) = -0.2 V at Iq/I b = -1 A/-01 A Applications • medium power amplifier

2SD1055

Abstract: 2SB1277
Contextual Info: 2SB822/2SB1277 Is "7 > y X £ /Transistors 2SB822 2SB1277 + y 7 \ y PNP v ' j a > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistors Power Amp. • ÿ l-Jfi'+ iiE ül/D im ension s U nit : mm) 1) FTR, F T L / < 7 ^ - v C T , I c m = - 3A, P c = 0.75W <D± f t *1T '* £ „

2SB1277

Abstract: 2SB822
Contextual Info: 2SB822/2SB1277 S "7 > v X $ /Transistors 2SB822 2SB 1277 PNP y ' j : i > h 7 > y 7 $ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors • 1 F T R A - y ^ - v I C T , Wffc\fi£|5|/D im ensio n s Unit : mm) Ic m = - 3 A , Pc=0.75W(7)^cttii! f ¿ S o

transistor 390

Abstract: 2sc4038 2SD2191 2sc4040
Contextual Info: Bipolar transistors-2SA series FTL summary Table 1 FTL general use transistors Application pc mW V CEO Ir ' c (m a x ) (V ) (mA) (mA) -50 -150 300 2SC4038 50 150 300 2SA1560 -32 -1000 2SB1277 -32 -2000 2SB1278 -80 2SC4037 Part no. 2SA1561A (Ta = h FE h FE

Contextual Info: 2SB1277 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SB891

Abstract: 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R
Contextual Info: Transistors Medium power Transistor -32V, -2A 2SB1188/2SB1182/2SB1240/2SB891 F/ 2SB822/2SB1277/2SB911M • E x t e r n a l d im e n s io n s (U nits: m m ) •F e a tu re s 1) LOW VcE(sat). 2SB1182 2SB1188 VcE(sat) = - 0 . 5 V (Typ.) (Ic / I b = - 2 A / - 0 . 2 A )

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1758

Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2SD1055

Abstract: ITS40 sb822 2SD1919
Contextual Info: 2SD1055/2SD1919 /T r a n s is to r s 2SD1055 x£°$*yyJl'yis-tMNPN y'J =i> Epitaxial Planar NPN Silicon Transistors 41^ ^ i S llliffl/M edium Power Amp. • ^•}fi‘+ > i0 /D im e n s io n s U n it : mm 1) FTR / f .y *T - v i- T , I c p = 2 .5 A Pc = 0 . 7 5 W ( 7 ) * a i * ? i . 5 „

d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Contextual Info: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)

Contextual Info: Transistors FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application | VCEO V *V CES * * V CER m . Part No. 2SA937ALN Low Noise - lc Max. (A) Pc (mW)

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

B1277

Abstract: 2sd1055
Contextual Info: 4GE ROHM CO LTD 7 ñ 2 ñ cn el 0 0 Q S 4 T 1 D Is*7 "y y 7, $ /Transistors 2 HSRHM 2 S B 8 2 2 / 2 S B 1 277 T - 2 7 - i r 2 8 1 3 8 2 2 z £ 0$ * y T J l ' 7 ° l ' - J - B P N P y i ; a > h 7 > y ^ ^ 9 ^ 1 1 9 7 7 ^ / Power Amp. Epitaxia, p,anar PNP silicon Transistors

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor

2SA785

Abstract: 2SC2673 2SB821 2SA1561 2sa881 2sa790
Contextual Info: Tr T ransistors • Pin Inserting Transistors • FTR, FTL Types ir U n d e r D e v e lo p m e n t Type FTR 2SA937LN F u n c tio n FTL — 2SB821 2SB1276 2SC1613A 2SC4034 2SC2021LN 2SA785 L o w N o is e V c f„ V *Vcs.s ' ' V . ; -4 0 100 -4 0 -3 0 0 80

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

2SB1482

Abstract: 2SD2004 low noise transistors rf 2SD2422 2sc4040 2sd2006 2SC4137 2SB1443 2sd2010
Contextual Info: Bipolar transistors-2SA series Overall product summary Product summary—Sheet 1 of 4 Package Application V CEO * V CES FTL ATV TO-92 MRT SPT V Part no. Part no. (The ( symbol indicates a matched pair) 50 /2SA933AS '2SC1740S 120 2SC2389S Low noise Preamplifier

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773