2SA821S Search Results
2SA821S Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SA821S | ROHM | Silicon PNP Transistor | Original | 43.82KB | 2 | ||
| 2SA821S | ROHM | High-Voltage Amplifier Transistor (-210V, -30mA) | Original | 34.74KB | 1 | ||
| 2SA821S | Transys Electronics | Plastic-Encapsulated Transistors | Original | 61.69KB | 1 | ||
| 2SA821S | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 38.95KB | 1 | ||
| 2SA821S | ROHM | TO-92, SPT Transistors | Scan | 194.44KB | 2 | ||
| 2SA821STPP | ROHM | High-Voltage Amplifier Transistor (-210 V, -30 mA) | Original | 34.73KB | 1 | ||
| 2SA821STPQ | ROHM | High-Voltage Amplifier Transistor (-210 V, -30 mA) | Original | 34.73KB | 1 |
2SA821S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SA821SContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage |
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o-92s2sa821s-50ax-150v | |
IMX5T108
Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
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OCR Scan |
2sa1543m2sa15492sa15542sa1809+16 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter |
Original |
o-92s2sa821s-150v | |
2SA821SContextual Info: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V |
Original |
o-92s2sa821s-150v | |
2Sa821sContextual Info: 2SA821S Transistors High-voltage Amplifier Transistor −210V, −30mA 2SA821S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) |
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2sa821s-210v-30ma2sc1651s+1 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 0.25W(Tamb=25℃) Collector current ICM: -0.03A Collector-base voltage |
Original |
o-92s2sa821s-210v270typ+1 | |
2SA821Contextual Info: 2SA821S 2SC1651S Transistors I High-voltage Amplifier Transistor —210V, —30mA 2SA821S •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 1C ) -2 1 0 V ) ) H igh breakdow n voltage. (V c e r= * 2 ) C om plem ents the 2S C 1651 S. 1 •P a c ka g in g specifications and hra |
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2sa821s2sc1651s--210v--30ma+2 | |
2SD2422
Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
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2sa1543m2sa933astp2sc5040k2sc2412kt146+15 | |
2SA821S
Abstract: 2SC1651S
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2sa821s2sc1651s94l-183-a3594l-519-c35 | |
2SA821SContextual Info: 2SA821S 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ |
Original |
2sa821so-92s-150v | |
2SC1651SContextual Info: 2SC1651S Transistors High-voltage Amplifier Transistor 210V, 30mA 2SC1651S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = 210V ) 2) Complements the 2SA821S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter |
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2sc1651s2sa821s15min | |
2SC1651S
Abstract: 2SA821S 2SC1651 94L-183-A35
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2sa821s2sc1651s94l-183-a3594l-519-c35+1 | |
1651S
Abstract: 2sC1651 transistor
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2sa821s2sc1651s--210v--30ma+7 | |
MBR1620CT
Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
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5ke105ke1005ke115ke110+16 | |
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
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o-92mkrc102mkrc112mo-92l+16 | |
2SC1815 NPN SOT-23
Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
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2n34162n39042n39062n4400+16 | |
2SD1960
Abstract: 2SA1835 2sd1960 transistor transistor 2SC1741 2sa1038 transistor 2SC17415 2SD2152 2SC1740 transistor 2SC2808 2SA1137S
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2sa11372sa1137s2sb7372sd786+14 | |
Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
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huaxing20od-1231n4148w1n4448w+15 | |
2sd1954
Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
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2sa790m2sa874m2sa937am2sa937amln+16 | |
2S0786
Abstract: 2S8737 2SC17406 2SA1835 2SA654
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2sa11372sa1137s2s87372s0786+9 | |
2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
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2n39042n39062n44012n4403+14 | |
2SC2030
Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
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1k--10k1k--20kdt3c144wdt5a113z+16 | |
PN3906 TRANSISTOR PNP
Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
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spt/to-92sptto-92llu--800loo250-700+16 | |
stroboContextual Info: Transistors Transistors • SPT Package Most commonly used leaded type transistors. They are taped to be fully compatible with automatic chip mounting lines. Part No. Application PNP Low noise VCEO V lc (A) Pc (W) Ta=25“C hR E Width Circuit Diagram Rank code |
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2sa933as2sa854s2sa1515s2sa1585s+7 | |