2SD1055
Abstract: ITS40 sb822 2SD1919
Contextual Info: 2SD1055/2SD1919 /T r a n s is to r s 2SD1055 x£°$*yyJl'yis-tMNPN y'J =i> Epitaxial Planar NPN Silicon Transistors 41^ ^ i S llliffl/M edium Power Amp. • ^•}fi‘+ > i0 /D im e n s io n s U n it : mm 1) FTR / f .y *T - v i- T , I c p = 2 .5 A Pc = 0 . 7 5 W ( 7 ) * a i * ? i . 5 „
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2sd1055/2sd19192sd1055822/2s2sb882+52sb1277ym2000its40sb8222sd1919
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2SD1766
Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1
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2sd1766/2sd1758/2sd1862/2sd1189f/2sd1055/2sd1919/2sd1227msc-622sd1766+82sd17582sd18622sd1227m2sd1189f2sd191905sl96-217-b242sd1055
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2SD1189F
Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1
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2sd1766/2sd1758/2sd1862/2sd1189f/2sd1055/2sd1919/2sd1227m2sb1188/2sb1182/2sb1240/2sb2sb822/+132sb1277/2sb911m2sd1758sc-632sd1189fo-126fp2sd19192sb8222sd1766two transistors2sd10552sd1227m2sd1055rll1000
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transistor
Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.
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2sb11882sb11822sb12402sb822+112sb12772sb911m2sd17662sd17582sd18622sd1189ftransistorsd1227transistor 2sb1240silicon pnp transistortransistor 2a
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2SD1758
Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M
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2sd17662sd17582sd18622sd1055+102sd19192sd1227m2sb11882sb11822sb12402sb891f96-217-b24transistor 2572sb911transistor 2sd1862
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2sd1919
Abstract: 2sb1277
Contextual Info: h 7 > ' / X $ / T ransistors 2SD1055/2SD1919 2 SD 1055 Xtf^^'>T;U7°U-^NPN '>U=I>h7>y'X$ O Q H IQ ^ Q Power Amp. Epitaxial Planar NPN Silicon Transistors • ^ -J F ^ S E I/D im e n s io n s U n it: mm 1) FTR y i:r , J-C-J > r - Ic p = 2.5A P c = 0 .7 5 W ^ ± t± i* T $ .5 o
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2sd1055/2sd1919160mv2sb822/2sb1277+32sb8822sd1055/2sd1919
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2sb882
Abstract: 2sd1055 2SB822
Contextual Info: 4GE ROHM CO LTD 7620=^ j> OGQSÖEtj 7 IH RHM 2 S D 1 0 5 5 /2 S D 1 9 1 9 T h 7 > y ' 7 $ / I ransistors - 'T -2 7 -/S ' 2SD1055 2SD1919 I t f ^ ^ V ^ ; U 7 ° U - ^ N P N /Medium Power Amp. Epitaxial Planar NPN Silicon Transistors
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2sd10552sd1919160mv2sb822/2sb1277fc3+32sb8822sb12772sb822
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SD1028
Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A
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2sd10012sb8002sd10022sd1003+152sd10042sd10052sb8042sd10062sb8052sd10072sd10282sd10312sd10362sd10942sd10872sd10132sd10192sd1037equivalent 2sd1028
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2SC2673
Abstract: 2SD1661M IMD3 ROHM equivalent lcm3000 2SA937LN 2SA937MLN 2SB821 2SC2063 imb8 2SC3078M
Contextual Info: □ 1 ROHM CORP DE I V ñ E ñ ' m DDDllSt. 1 • FTR, ATR Types * New Producís A Maintenance part. |v • / • .Function "TV Tuner Mix Osc. Chroma FM RF Mix Osc. FM IF Local Osc. Conv. AM RF Local Osc. Conv. 19 19 50 2SC4045 11 50 *2SC3270M 300 100 ’
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2sc30802sc3080m2sc40452sc3270m+122sc3079m2sc20632sc2063m2sc3078m2sa937ln2sc26732sd1661mimd3 rohm equivalentlcm30002sa937mln2sb821imb8
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Contextual Info: Transistors FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application | VCEO V *V CES * * V CER m . Part No. 2SA937ALN Low Noise - lc Max. (A) Pc (mW)
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2sa937aln2sb8212sc1613a2sc2021ln+62sa7852sa937a2sc20212sc47752sa8742sa881
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B1277
Abstract: 2sd1055
Contextual Info: 4GE ROHM CO LTD 7 ñ 2 ñ cn el 0 0 Q S 4 T 1 D Is*7 "y y 7, $ /Transistors 2 HSRHM 2 S B 8 2 2 / 2 S B 1 277 T - 2 7 - i r 2 8 1 3 8 2 2 z £ 0$ * y T J l ' 7 ° l ' - J - B P N P y i ; a > h 7 > y ^ ^ 9 ^ 1 1 9 7 7 ^ / Power Amp. Epitaxia, p,anar PNP silicon Transistors
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00qs4t1200mv2sd1055/2sd19192sd1055+32sd19192sb822/2sbb1277
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2sd1469
Contextual Info: Transistors _ • j. « 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -
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2sb12762sc1613a2sc40342sc2021ln+12sd1469
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2SD1055
Abstract: 2SB1277
Contextual Info: 2SB822/2SB1277 Is "7 > y X £ /Transistors 2SB822 2SB1277 + y 7 \ y PNP v ' j a > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistors Power Amp. • ÿ l-Jfi'+ iiE ül/D im ension s U nit : mm) 1) FTR, F T L / < 7 ^ - v C T , I c m = - 3A, P c = 0.75W <D± f t *1T '* £ „
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2sb822/2sb12772sb8222sb12772sd1055/2sd1919+22sd10552sd1919
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Contextual Info: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor
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2SA785
Abstract: 2SC2673 2SB821 2SA1561 2sa881 2sa790
Contextual Info: Tr T ransistors • Pin Inserting Transistors • FTR, FTL Types ir U n d e r D e v e lo p m e n t Type FTR 2SA937LN F u n c tio n FTL — 2SB821 2SB1276 2SC1613A 2SC4034 2SC2021LN 2SA785 L o w N o is e V c f„ V *Vcs.s ' ' V . ; -4 0 100 -4 0 -3 0 0 80
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2sb8212sd14692sa8062sc1615+82sa7902sc15452sd21452sd23122sa7852sc26732sa15612sa881
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819
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DG01D
Abstract: 82360 2SD1225
Contextual Info: ROHM COR? “ " TöD D | Medium Power Amplifiers b Vcbo Package Type Min. • PNP Transistors BVce O BVebo 'ÇBO @ V0B Min. Min. Max. RN5819 TO-92 EBC TO-92 (EBC) TO-92 (EBC) MPS4354 TO-92 (EBC) 60V 60V 5V 50nA 50V MPS4355 TO-92 (EBC) 60V 60V 5V 50nA 50V
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dg01d7et-27-01100mhz120mhz+8135mhzrn5815rn5817rn5819100nadg01d823602sd1225
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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2SD2159
Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise
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2sa825s2sa830s2sa854s2sa933as+152sa933asln2sa1198s2sa1199s2sa1515s2sa1585s2sc1645s2sd21592sd24212sb14852sb13332sd20612sc2021qrs2sd21722sd2388darlington rf
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2SD1189F
Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766
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2sd1766/2sd1758/2sd1862/2sd1189f/2sd1055/2sd1919/2sd1227m2sb1188/2sb1182/2sb1240/2sb891f/2sb822/2sb1277/2sb911m+122sd1758sc-632sd1189fo-126fp2sd19192sd17662sb1240ll1000 g2sd18622sd10552sd1227m2sb911m
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IC 7555
Abstract: ftr 02 2SA785 2SA1555 2sa155 7555 ic 2sb127 2sc2673 2SD2191 2SA1554
Contextual Info: _ • j. « Transistors 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -
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2sa937aln2sb821w2sb12762sc1613a+14w2sc40342sc2021ln2sa7852sa15542sa937a2sa1561aic 7555ftr 022sa15552sa1557555 ic2sb1272sc26732sd2191
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