2SB127 Search Results

TRANSISTOR SMD 1a 9

Abstract: 2SB1275 50MHZ
Contextual Info: Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency. fT = 50MHZ +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SD1913

Abstract: 2SB1274
Contextual Info: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2267.1

Abstract: EN2267 EN2267B en-2267 2SB1271 EN226
Contextual Info: Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2SB1274

Abstract: 2SD1913 2SB1274 R
Contextual Info: SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2sB1274 transistor

Abstract: 2SB1274
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.

2SB351

Abstract: 2SB1278 2sb127 2SB851 T-27-15
Contextual Info: ROHM CO LTD * MOE D WÊ 7 0 2 0 ^ OOOS^M 2SB851 /2SB1278 h 7 > V 7 £ /Transistors ' 2SB351 2S3127S ö B 9 RHfl " ' . T -2 7 - /ST X L°£ * y 7 1 7 ° I s - f M PNP y U =1 > h ^ > 9 'Z $ 4 ,ffi^ )is llïffl/M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

Contextual Info: 2SB1274 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR Features — — — — 1 2 3. EMITTER 3 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2SB1236A

Abstract: 2SB1275 2SD1857A 2SD1918 50MHZ
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)

2SB821

Abstract: transistor 2sb1276 2SB1276 B1276
Contextual Info: Is "7 > v 7 7 /Transistors 2SB821 2SB 1276 2SB821/2SB1276 + y [s—r m PNP h y > '> 7 7 Epitaxial Planar PNP Silicon Transistor rb b 'fiiS e fii'tiffl/L o w rbb’ Low Noise Amp. • 1 jiia /D im e n s io n s Unit : mm) ( R gT ifti6 § )o 2SB821 N F = 2 .5 d B (Typ.)

2SB1277

Contextual Info: 2SB1277 Transistor, PNP Features Dimensions Units : mm • available in FTL TL2 package • large output power, lCM = -3 A, Pc = 0.75 W 2SB1277 (FTL TL2) • low saturation voltage, typically VcE(sat) = -0.2 V at Iq/I b = -1 A/-01 A Applications • medium power amplifier

2SB1274

Contextual Info: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES    General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process

2SB1275

Abstract: 4330E Model 450 Q2SB1275
Contextual Info: SPICE PARAMETER 2SB1275 by ROHM TR Div. * 2SB1275 PNP BJT model * Date: 2006/11/20 .MODEL 2SB1275 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

Contextual Info: 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J FEATURES General Purpose Switching and Amplification. Wide ASO Adoption of MBIT Process Low Saturation Voltage.

D1918

Contextual Info: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V

B1275

Contextual Info: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V

2sb1569a

Contextual Info: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR PNP TO-220 1. BASE FEATURES 2. COLLECTOR z z z z Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

Transistor TT 2246

Abstract: TT 2246 2SB1274 ENN2246B 2SD1913 Sb127 sd1913
Contextual Info: Ordering number: ENN2246eT| PN P /N PN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A Features • • • • • Wide ASO Adoption o f M BIT process .

2SB1274

Abstract: 2SD1913 82055 D2000 transistor
Contextual Info: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0

2SB1273

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1273 DESCRIPTION •High Reliability ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )