2SD1148 Search Results

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

2SD1148

Abstract: 2SB863 equivalent 2sb863 hfe1
Contextual Info: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Abstract: 2sd1148
Contextual Info: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB863

Abstract: 2sb863 transistor 2SD1148 SC-65
Contextual Info: 2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage

2sd1148

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm .1S9MAX. . 0 3 ,2 ±0.2 FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25uC &45±Q2 RATING

2SD1148

Abstract: 2SB863 audio amplifier 70w
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING

2sb863 transistor

Abstract: 2sb863 2sd1148
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB863 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications

Contextual Info: T oshiba oiscrete St. /o p to T 2SD1148 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T Y E S D i>6C 07873 0007073 DT-3B-J3 SILICO N NPN T R IP L E D IFFU S ED TYP E POWER AMPLIFIER APPLICATIONS. Unit in mm 1&9MAX. 0 3 .Z ± O iS FEATURES: r> . Complementary to 2SB863.

2SD424 TOSHIBA

Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
Contextual Info: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—

2SB863

Abstract: 2SB863 equivalent 2sd1148
Contextual Info: Inchange Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage

PA100

Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9

Contextual Info: Sb TOSHIBA {DISCRETE/OPTO} 9097250 TO SH IBA dF | T O ^ E S a DD073L3 5 D ISC R ET E /O P T O ^ 3 SILICON PNP TRIPLE DIFFUSED TYPE_ o POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9 M A X , 0 Z . e ± O . 2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity

ic 748

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1148 Features • • NPN Silicon Power Transistors With TO-3P I D package Power amplifier applications Maximum Ratings Symbol V CEO V CBO

2sd1148

Abstract: 2sb863
Contextual Info: SavantIC Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2sb863

Abstract: 2sd1148
Contextual Info: JMnic Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SB863

Abstract: 2SD1148
Contextual Info: TOSHIBA ~5b { D I S C R E T E / O P T 0> ]>|F| TCHVESO □□□73ía3 S "| ~ „y 9097250 TOSHIBA 3 3 CDIS C R E T E / O P T O ~ S IL IC O N PNP T R IP L E D IF F U SE D TYPE_ Unit in mm o POWER AMPLIFIER APPLICATIONS. 0 a.2 ±az ia9MAX. FEATURES:

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt