2SD1160 Search Results

2SD1160

Abstract: 2SD1160-Y
Contextual Info: 2SD1160 TO SH IBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS 0.6M A X . tf • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. Built-in Free Wheel Diode

Contextual Info: T O SH IB A 2SD1160 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 160 SWITCHING APPLICATIONS U nit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS 6.8MAX. (a ) 5.2 ±0.2 o 0.6MAX. i^ H • High DC Current Gain • Low Saturation Voltage : 0.6 V MAX. @

D1160

Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Contextual Info: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode

Contextual Info: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode

D1160

Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Contextual Info: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain · Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) · Built-in free wheel diode

Contextual Info: 2SD1160 TOSHIBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. @ Built-in Free Wheel Diode

toshiba diode 2A

Contextual Info: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)

2SD1160

Abstract: 2SD1160-Y
Contextual Info: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 160 Unit in mm SWITCHING APPLICATIONS SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. (a Built-in Free Wheel Diode

1M300

Abstract: D1160
Contextual Info: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode

PA100

Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
Contextual Info: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9

2SD1160

Abstract: 2SD1160-Y
Contextual Info: 2SD1160 TO SH IBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS 0 .6M A X . tf • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. Built-in Free Wheel Diode

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

D1160

Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Contextual Info: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode

2SD1160

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1160 Unit in mm SWITCHING APPLICATIONS. SUITABLE FOR MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain . Low Saturation Voltage : 0.6V MAX. . Built-in Free Wheel Diode CS 68MAX. dd +I a @Ic=2A, lB=40mA ih- MAXIMUM RATINGS Ta=25 C

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Power MOLD

Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072
Contextual Info: contents www search print index quit Small Signal Devices ➔ ➔ • Surface Mount Products D-PACK POWER MOLD 23.1 23.2 23.3 Small Signal Devices TO S H I B A contents www search print index quit Small Signal Devices ➔ ➔ ■ Surface Mount Products D-PACK (POWER MOLD)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SD1810

Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5