2SD1224 Search Results

B941

Abstract: B 941 2SD1224
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage

2SD1224

Contextual Info: TO SH IBA TO SHIBA TRANSISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 224 PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., 5.2 ±0.2 PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15

2SD1224

Abstract: C2804
Contextual Info: TO SH IBA 2SD1224 TO SHIBA TRANSISTOR 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15 • High DC Current Gain

D1224

Abstract: 2SD1224
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: TOSHIBA 2SD1224 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) i <; n 1• V BM F 7 i d PULSE MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS SWITCHING APPLICATIONS 6.8MAX. (A ) 5.2 ±0.2 PO W ER AM PLIFIER APPLICATIONS • . • i^ H

Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1224

Abstract: D1224
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1224 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 4000 (Min.)

Contextual Info: 2SD1224 SILICON NPN EPITAXIAL TYPE PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : hFE=4000 Min. (VC e =2V, Ic=150tnA) . Low Saturation Voltage : vCE(sat)=l-5V(Max.) (Ic=lA, lB=lmA)

2SD1224

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 224 PULSE MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS U nit in mm SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE = 4000 (Min.)

Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

Contextual Info: TOSHIBA TOSHIBA TRAN5ISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) i <; n 1 1 1 a M r •■ T' ■ Unit in mm PULSE MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. 6.8MAX SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain

D1224

Abstract: 2SD1224
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1224

Abstract: D1224
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SC3181

Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

Power MOLD

Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072
Contextual Info: contents www search print index quit Small Signal Devices ➔ ➔ • Surface Mount Products D-PACK POWER MOLD 23.1 23.2 23.3 Small Signal Devices TO S H I B A contents www search print index quit Small Signal Devices ➔ ➔ ■ Surface Mount Products D-PACK (POWER MOLD)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs