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    2SD2012 Search Results

    2SD2012 Datasheets (17)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD2012
    		STMicroelectronics TRANS GP BJT NPN 60V 3A 3TO-220F Original PDF 126.19KB 5
    2SD2012
    		Toshiba Audio Frequency Power Amplifier Original PDF 351.44KB 2
    2SD2012
    		Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375 Original PDF 125KB 5
    2SD2012
    		Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SD2012
    		Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82KB 1
    2SD2012
    		Unknown Japanese Transistor Cross References (2S) Scan PDF 35.69KB 1
    2SD2012
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 43.26KB 1
    2SD2012
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 44.6KB 1
    2SD2012
    		Unknown The Transistor Manual (Japanese) 1993 Scan PDF 94.76KB 2
    2SD2012
    		Unknown Transistor Substitution Data Book 1993 Scan PDF 44.8KB 1
    2SD2012
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.5KB 1
    2SD2012
    		Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan PDF 167.06KB 3
    2SD2012
    		Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF 187.54KB 4
    2SD2012
    		Toshiba NPN Transistor Scan PDF 187.54KB 4
    2SD2012-BP
    		Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF 449.95KB
    2SD2012(F,M)
    		Toshiba 2SD2012 - TRANSISTOR NPN 60V 3A TO-220 Original PDF 124.99KB 5
    badge 2SD2012
    		JCET Group NPN transistor in TO-220F package, designed for audio frequency power amplification, with 60 V collector-emitter voltage, 3 A continuous collector current, high DC current gain, low saturation voltage, and 2 W power dissipation. Original PDF
    SF Impression Pixel

    2SD2012 Price and Stock

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    STMicroelectronics 2SD2012

    Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220F Tube - Rail/Tube (Alt: 2SD2012)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SD2012 Tube 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 2SD2012 14
    • 1 $2.05
    • 10 $1.64
    • 100 $1.23
    • 1000 $1.23
    • 10000 $1.23
    		Buy Now

    Toshiba America Electronic Components 2SD2012

    TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () 2SD2012 624
    • 1 $3.01
    • 10 $3.01
    • 100 $3.01
    • 1000 $1.24
    • 10000 $1.24
    		Buy Now
    2SD2012 99
    • 1 $0.45
    • 10 $0.45
    • 100 $0.30
    • 1000 $0.30
    • 10000 $0.30
    		Buy Now

    2SD2012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		2sd2012 PDF

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)


    OCR Scan     		2sd2012o-220 PDF

    transistor 2sd2012

    Abstract: 2sd2012
    Contextual Info: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)


    OCR Scan     		2sd2012transistor 2sd2012 PDF

    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2sd2012 PDF

    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2sd2012 PDF

    2SD2012

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)


    Original     		2sd2012o-220f PDF

    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2sd2012 PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2sd2012 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation


    Original     		o-220f2sd2012 PDF

    Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2sd2012 PDF

    2sd2012

    Contextual Info: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor


    Original     		2sd2012o-220f PDF

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2sd2012transistor d2012d2012 transistorbr d2012+4d2012 amplifierd2012d2012 toshibatoshiba d2012 PDF

    transistor d2012

    Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
    Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		2sd2012transistor d2012d2012 transistord2012 amplifier+3br d2012d2012d2012 toshiba PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD2012 Features • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2sd2012o-220f PDF

    Contextual Info: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)


    OCR Scan     		2sd2012 PDF

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm . High DC Current Gain : 100 Min. ia3MAX, 0 zz ± a z . Low Saturation Voltage : VCE(sat) = l*OV(Max.)(IC=2A, IB=0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)


    OCR Scan     		2sd2012o-22010e1a PDF

    2sd2012

    Abstract: 2SB1366 2SB136
    Contextual Info: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and


    Original     		2sd2012o-220f2sb13662sb136 PDF

    2SB1375

    Abstract: 2SD2012
    Contextual Info: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:


    Original     		2sb1375o-220f2sd2012 PDF

    2SB1375

    Abstract: 2SD2012
    Contextual Info: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)


    Original     		2sb1375o-220f2sd2012 PDF

    transistor d2012

    Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
    Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2sd2012transistor d2012d2012 transistord2012 toshiba+3d2012 amplifierbr d2012d2012 PDF

    2sd2012 transistor

    Abstract: 2sd2012 2SB1375
    Contextual Info: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation


    Original     		2sd20122sb13752sd2012 transistor PDF

    D2012 toshiba

    Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
    Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2sd20122-10r1ad2012 toshibatransistor d2012+3d2012 transistorbr d2012transistor 2sd2012 PDF

    2SD2Q12

    Contextual Info: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\


    OCR Scan     		2sd20122sd2q12 PDF

    B1375

    Abstract: 2SB1375 2SD2012
    Contextual Info: 2SB1375 東芝トランジスタ シリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。


    Original     		2sb13752sd20122-10r1a20070701-ja+1b1375 PDF