2SB136 Search Results

2SD2060

Abstract: 2SB1368
Contextual Info: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)

A 933 S transistors

Abstract: 2SB1361 2SD2052 IS020
Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF

2SD2052

Abstract: 2SD205 2SB1361
Contextual Info: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN

294a

Abstract: 2SB1361 2SD2052
Contextual Info: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)

2SB1361

Abstract: 2SD2052
Contextual Info: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING

Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features ro 4 - - Unit *. mm 5.2max. Ì/3 .2 6 . 9 m in . S r - Z L - k • V ery good linearity of DC c u rre n t gain hpF

Contextual Info: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage

2SD2053

Abstract: 2SB1362 ic 4001
Contextual Info: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Symbol Ratings Unit 150 V 150 V Collector to base voltage VCBO VCEO Emitter to base voltage

2SB1360

Contextual Info: 2SB1360 Transistor, PNP Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically VCE(sat) - -0.3 V at lc/lB = -3 A/-0.3 A excellent current-to-gain characteristics • • 2SB1360 (HRT) 8 .0 ±0.2 4.5 ±0.2

2SB1367

Abstract: 2SD2059
Contextual Info: Inchange Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2059 ・Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ・Collector power dissipation:

2SB1362

Abstract: 2SD2053
Contextual Info: Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage

2SD2052

Abstract: 2SB1361
Contextual Info: SavantIC Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN

2SB1366

Abstract: 2sd2058
Contextual Info: SavantIC Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2058 ·Low collector saturation voltage: VCE SAT =-1.0V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )

2SD2059

Abstract: 2SB1367
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1367 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Collector Power Dissipation: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A)

Contextual Info: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage

Contextual Info: MCC TM Micro Commercial Components 2SB1366F-O 2SB1366F-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • € Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

2SB1362

Abstract: 2SD2053
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.

2SD2058

Abstract: transistor 2sd2058 2SB1366
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1366 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)

2SD2060

Abstract: 2SB1368
Contextual Info: SavantIC Semiconductor Product Specification 2SD2060 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 )

2sb1367

Abstract: 2SD2059
Contextual Info: SavantIC Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25 )

2SB1369

Contextual Info: SavantIC Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Emitter

2SD2061

Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061

2SB1362

Abstract: 2SD2053
Contextual Info: SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base