D2012 Search Results
D2012 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| G874D201202CEU |
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Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY |
D2012 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| D 20 12 | Gedore Torque | SOCKET 1/4"" 12 MM | Original | 6.54MB | |||
| D2012 | Unknown | Si NPN TRANSISTOR | Original | 14.58KB | 1 | ||
| D 20 1/2AF | Gedore Torque | SOCKET 1/4"" 1/2"" | Original | 6.54MB | |||
| D2012UK |
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Metal Gate RF Silicon FET | Original | 53.86KB | 4 | ||
| D2012UK |
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED | Original | 60.31KB | 4 | ||
| D2012UK | Unknown | Shortform Datasheet & Cross References Data | Short Form | 76.63KB | 1 | ||
XL-TD2012UBC
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XINGLIGHT | 2.0*1.25*1.4mm, 高亮蓝色/透明胶体, 符合ROHS, MSL 4-5级, EIA标准包装, 适用于SMT自动化生产, 红外线回流焊, 家电电子表, 电子台历, 电子礼品, 数码, 通信, 汽车电子, 照明灯饰, 电子玩具, 交通指示, 城市亮化工程。 | Original | ||||
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XL-TD2012UYC
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XINGLIGHT | 2.0*1.25*1.4mm, high brightness Yellow/Transparent, MSL: 4-5, EIA standard, SMT compatible, RoHS compliant. | Original | ||||
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XL-TD2012SURC
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XINGLIGHT | 2.0*1.25*1.4mm, 高亮红色/透明胶体, 环保产品, MSL:4-5级, EIA标准包装, SMT自动化生产, 红外线回流焊制程, 家电电子表, 电子台历, 电子礼品, 数码, 通信, 汽车电子, 照明灯饰, 电子玩具, 交通指示, 城市亮化工程 | Original | ||||
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2SD2012
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JCET Group | NPN transistor in TO-220F package, designed for audio frequency power amplification, with 60 V collector-emitter voltage, 3 A continuous collector current, high DC current gain, low saturation voltage, and 2 W power dissipation. | Original | ||||
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SBD20120TCTB
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JCET Group | SBD20120TCTB and SBDF20120TCTB are 120V Schottky barrier rectifiers in TO-220 packages, featuring low forward voltage drop, high current capability up to 20A average, and surge current protection, suitable for high-efficiency power rectification applications. | Original | ||||
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XL-TD2012UWC
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XINGLIGHT | 外观尺寸2.0*1.25*1.4mm，高亮白色/黄色胶体，环保符合ROHS，MSL 4-5级，EIA标准包装，适用于SMT自动生产和红外线回流焊，应用领域包括家电、电子表、电子礼品、数码通信、汽车电子、照明灯饰、电子玩具、交通指示、城市亮化工程。 | Original | ||||
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XL-TD2012UGC
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XINGLIGHT | 2.0*1.25*1.4mm, Green/Transparent, 4-5 MSL, RoHS, EIA, SMT, infrared reflow. | Original |
D2012 Price and Stock
OptoFlash OF-SMD2012WLED; white cold; SMD; Case (mm): 2012; 1000÷1400mcd; 6500K; 120° |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OF-SMD2012W | 53,620 | 5 |
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Buy Now | ||||||
OptoFlash OF-SMD2012YLED; yellow; SMD; 0805; 210÷270mcd; 1.8÷2VDC; 2x1.25x0.68mm; 120° |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OF-SMD2012Y | 39,810 | 10 |
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Buy Now | ||||||
OptoFlash OF-SMD2012G-1LED; green; SMD; 0805; 600÷800mcd; 2.8÷3.4VDC; 2x1.25x0.68mm; 120° |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OF-SMD2012G-1 | 22,227 | 10 |
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Buy Now | ||||||
Xiamen Hongfa Electroacoustic Co.,Ltd. HFD2/012-S-L2Relay: electromagnetic; Ucoil: 12VDC; DPDT; 3A; 1A/125VAC; 3A/30VDC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HFD2/012-S-L2 | 829 | 1 |
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Buy Now | ||||||
BASiC Semiconductor B2D20120H1Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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B2D20120H1 | 17 | 1 |
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Buy Now | ||||||
D2012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
9507 marking
Abstract: D2012 transistor d2012
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Original |
203651bd201204a001nm3017-cs02+2 | |
D2012Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
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241904bd201206a001nm6002-cs01 | |
D2012
Abstract: 88621
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Original |
202174cd201205a001nm5014-cs02+1 | |
D2012
Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
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242002bd201208a001nm8047-cs01+3 | |
25160
Abstract: D2012
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Original |
251601bd201204a001nm3032-cs03+1 | |
10840
Abstract: D2012
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Original |
252602bd201206a001nm6019-cs01+1 | |
NM4002-CS01
Abstract: D2012
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Original |
270802bd201204a001nm4002-cs01 | |
D2012
Abstract: 11515DB
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Original |
203629bd201204a001203swr+2 | |
D2012Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
253004bd201206a001nm6028-cs01 | |
20PF
Abstract: D2012 252101
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Original |
252101bd201206a001nm6018-cs01+2 | |
D2012Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
201096bd201204a001ni0033-cs04 | |
09310
Abstract: 7686 D2012
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Original |
203608bd201204a001ds4018-cs02+2 | |
D2012Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
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253010bd201209a001center125+1 | |
D2012
Abstract: 61M10
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Original |
203649bd2012421-809g04a001+2 | |
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D2012
Abstract: 593790
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Original |
233004bd201208a001nm8004-cs01+1 | |
transistor d2012
Abstract: D2012
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Original |
242003bd201206a001nm6015-cs01+1 | |
D2012Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
Original |
221904bd201207a001nm7037-cs01 | |
D2012Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
Original |
250506bd201206a001center140+1 | |
transistor D2012Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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d2012uk450mwtransistor d2012 | |
transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
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d2012transistor--d2012transistor d2012d2012 transistor+2 | |
D2012Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage |
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d2012 | |
D2012UKContextual Info: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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d2012uk | |
D2012Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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201532bd201204a001201rt+1 | |
8930
Abstract: D2012
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203624bd201204a001203swr+2 | |