450MW Search Results

47DBM

Contextual Info: News Release ⎜ www.linear.com 50Ohm IF Gain Block Provides 47dBm OIP3, 15.5dB Gain Consumes only 450mW MILPITAS, CA – September 18, 2012 – Linear Technology announces the LTC6431-15, a 15.5dB gain block that achieves high dynamic range in a 50Ohm environment from 20MHz to

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: MA02203AD 3.6V 450mW RF Power Amplifier IC for DECT Applications Features DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) N/C N/C +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C •= •= •= •= •=

UTC 225

Abstract: MMBT9015G MMBT9014
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015  ORDERING INFORMATION Ordering Number Package Lead Free

Contextual Info: ANALOG DEVICES □ 24 X 24-Bit CMOS Multiplier ADSP-1024A FEATURES 24 x 24-Bit Parallel Multiplication 95ns Multiply Time 450mW Power Dissipation with TTL-Compatible CM OS Technology Twos-Complement Data Format Rounding Options at Three Positions Left-Shifts of 0, 1, or 2 Bits on Output

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

Contextual Info: y MN774 MICRO NETWORKS /¿P-COM PATIBLE 8/iSec, 12-Bit A /D C O N V E R T E R DESCRIPTION • Complete, 8^sec, 12-Bit A/D Converter with Internal: Clock Reference Control Logic • HI-774A Pin and Function Compatible: Faster 9/xsec over Temp. Lower Power (450mW max)

transistor D2012

Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

SS9014

Abstract: SS9015
Contextual Info: SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

SS9014

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage

Contextual Info: PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOWLEVEL&LOWNOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9015 TO-92 B ♦ A B SO L U T E M A X IM U M R A T IN G S (Ta= 25 °C) Symbol Rating

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE • High total power dissipation. PT=450mW • High Iife and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage

Contextual Info: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )

Paradigm 41024

Contextual Info: PARADIGM TECHNOLOGY INC pa r a d em 50E D PAT 1 Megabit Static RAM 128K x 8-Bit PD M 41024H Features Description □ High speed access times Com'l: 20,25,35 and 45ns M il: 20,2 5 ,3 5 ,45, and 55ns □ Low power operation - PDM41024H Active: 450mW typ. Standby: 200 mW (typ.)

song chuan 835

Abstract: 835L 835L-1A-C 835NL 8a 250v t85 R9552647 835-1A 835NL-1A-F-C 835L-1A-F-C song chuan
Contextual Info: SONG CHUAN 835 Features ϭ Miniature 12A 125VAC, 10A 250VAC/30VDC PCB Relay. ϭ UL/CUL, CSA, TUV, VDE approved. ϭ 450mW and 200mW coil are available. ϭ Optional for high CTI 250 plastic material E version and VDE approved type. ϭ Comply with RoHS-Directive 2002/95/EC.

NTE1530

Contextual Info: NTE1530 Integrated Circuit Audio Power Amp w/ALC, 450mW Description: The NTE1530 is a silicon monolithic integrated circuit designed for audio power amplifier applications at a 6 volt power supply. This device contains a high gain low noise preamplifier, an automatic level control ALC and a high

Contextual Info: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

powernetix PNTX

Abstract: PowerNetix 980 nm pump PNTX-9000 GR-468-CORE DSAUD0057759.txt HI1060 Defense/980 nm pump
Contextual Info: PowerNetix 980 nm Pump Laser 9000 Series Datasheet Cooled, Single Mode, 14-pin Butterfly Package Description EM4’ PowerNetix Uniline (9000 Series) single mode, cooled 980 nm pump laser delivering up to 450mW of fiber-coupled power. The module is packaged using a unique, patent pending technology called

ADE2

Abstract: ADSP-1024 ADSP1024 1024a
Contextual Info: ANALOG DEVICES FEATURES 24 x 24-Bit Parallel Multiplication 95ns Multiply Tima 450mW Power Dissipation with TTL-Compatible CM OS Technology Twos-Complement Data Format Rounding Options at Three Positions Left-Shift« of 0,1, or 2 Bits on Output Overflow and Normalization Status Flags

SS9014

Abstract: SS9015
Contextual Info: SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR D400

Abstract: D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014
Contextual Info: S9014 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Application TO- 92 Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=450mW Comple men tary to S9015 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value

MMBT9014

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free

RH-12

Contextual Info: RH SERIES INDUSTRIAL RELAYS 14.5 .571 DIMENSIONS The RH series is a small size relay with a 10A capacity. This relay also offers operating power of 250mW and a nominal power rating of 450mW. 0.2(.008) UL & CUL File #E223388 10 Amps small size relay. 1A (SPST-NO), 1C (SPDT) arrangements.