MMBT9015 Search Results

UTC 225

Abstract: MMBT9015G MMBT9014
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free

mmbt9015

Abstract: MMBT9014B MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9014B

Abstract: MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

Contextual Info: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )

MMBT9015DLT1

Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
Contextual Info: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „

MMBT9014

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free

MMBT*9015c

Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
Contextual Info: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

MMBT9015LT1

Contextual Info: MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA Collector-Emiller Voltage:V CE =-45V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS

MMBT9014

Contextual Info: MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION

MMBT*9014d

Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015C
Contextual Info: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

MMBT9014C

Abstract: MMBT*9014d MMBT9014B MMBT9015B MMBT9015C MMBT9014D
Contextual Info: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

MMBT9014C

Abstract: MMBT9014D MMBT9014B MMBT9015B MMBT9015C
Contextual Info: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

mmbt9014

Abstract: MMBT9015
Contextual Info: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )

mmbt9014

Abstract: MMBT9015C MMBT9015 MMBT9015B
Contextual Info: MMBT9015 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications As complementary types the NPN transistor MMBT9014 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

mmbt9014

Abstract: MMBT9014C MMBT9014B MMBT9014D MMBT9015
Contextual Info: MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

MMBT9015B

Abstract: MMBT9015C
Contextual Info: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9015C

Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B
Contextual Info: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

Contextual Info: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

MMBT9015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION

UTC 225

Abstract: MMBT9015 mmbt9014
Contextual Info: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AM PLI FI ER, LOW LEV EL & LOW N OI SE ̈ FEAT U RES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ̈ ORDERI N G I N FORM AT I ON Ordering Number

mmbt9014

Abstract: MMBT9015
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ „ ORDERING INFORMATION Ordering Number Package