2SD2025
Abstract: 2SB1344
Contextual Info: $ /T ra n s is to rs h7 > y ^ 2SD2025 2SD2025 1.1? $ % y 7 Jls7° Is — NPN v h 7 > yZ ? ^ - U > h > r a Epitaxial Planar NPN Silicon Transistor (Darlington) l i S l ^ i l ' l i f f l / L o w Freq. Power Amp. • \ti£[li]/Dim ensions (U n it: mm) 2) ? > / ' * - ? ' - f i - K r t i S o
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2sd20252sb1344t0-220fp |
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D403
Abstract: 2SD2025 D-403 94L-969-D403 94L-374-B403
Contextual Info: Transistors 2SB1344 2SD2025 94L-374-B403 (94L-969-D403) 299
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2sb13442sd202594l-374-b40394l-969-d403+2d403d-403
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D403 power transistor
Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.
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2sb13442sd2025300kq100ms+11o-220fpo-220o-126d403 power transistord403 transistortransistor d403d403 a100v 2a mpt3d403sc-75a2305 transistor
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2SB1344
Abstract: 2SD2025
Contextual Info: SavantIC Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and
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2sb1344o-220fa2sd2025-100v |
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2sB1344
Abstract: 2SD2025
Contextual Info: Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON ・Complement to type 2SD2025 APPLICATIONS ・For low frequency power amplifier and
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2sb1344o-220fa2sd2025-100v |
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2SD2037
Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Contextual Info: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028
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2sd19882sd19892sd19902sd1991a+92sd1992a2sd19932sd1994a2sd19952sd20172sd20182sd20372sd20012sd2033
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2SB1344
Abstract: 2SD2025
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD2025 APPLICATIONS
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-100v2sd202510mhz2sb1344 |
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2SD2025
Abstract: 2SB1344
Contextual Info: SavantIC Semiconductor Product Specification 2SD2025 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and
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2sd2025o-220fa2sb1344 |
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B 1344
Abstract: b1344 2sd2025
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor 100 V, —8A 2SB1344 •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in resistor between base and emitter. 3 ) Built-in damper diode. 4 ) Complements the 2SD2025. •A b s o lu te maximum ratings (T a = 2 5 t )
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2sb13442sd2025100ms10mhz+394l-969-db 1344b1344
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2sd16602sd1198a2sd16222sd1631+132sc28832sd14062sc32992sd14122sd1296nec 2sc31572sd9992sd13172sc36942sc37602sd20612sd2239nec 1678
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2SD157
Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589
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2sd15922sd11412sd14462sd1237l+132sc36922sd1271a2sd18332sd16682sd12712sd1572sd22382sd12772sd15772sd15902sc18472sc32582sd2239
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2sd1878
Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö
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2sd22982sd22992sd23002sd2301+162sd23022sd23032sd23042sd23052sd23062sd23072sd18782sd23392sd18762sd23332sc3887a2sd15452sd20092sc3887t m 23132sd1431
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2SC3181
Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI
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2sd17652sd15892sd19332sd1590+132sd16042sd20252sd8222sd16192sc31812sd15261286-z2sd22392sc20602sd14482sd4002sd7982sd1114
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te 1819
Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =
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2sd18132sd18142sd16672sd1406+152sd21072sd21052sd12672sd1445a2sd12502sc4331te 18192sd18782sc42112sd16492sd185618152sc47232sd17072sd1929
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3sk212o-220o-220fp2sd1562+152sb10852sd17632sb11862sd20332sb13532sd1562a2sb1335a2sd20372sd206128c432sb13572sb13592sd20412sd20962sd1856
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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SB1335A
Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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o-220t0-220fpo-220fno-220fp+11t0-220sb1335a2sd20612sd2033a2sb14962sb1342transistor 2sd20912sd23942sb13702sc43542sd2041
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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B1335A
Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033
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tq-220o-22qfp2sc4505sdp901+152sc43542sd20612sb14962sb13342sc4572sa1634b1335ad2033ad1855ad2037b1186a2sb1335ad2038b 1186ab1085a
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L2505
Contextual Info: h "7 > y7 > $ / T 2SB1344 ransistors 2SB 1344 PNP y <J □ > h 7 > y X 2 11?$* V Epitaxial Planar PNP Silicon Transistor Darlington 1£i§>Jfc£2j*Sli!ffl/L o w Freq. Power Amp. • 1) h -> fS < S c T 'h F E ? - ' ) > 2) • - 3) ' K - * • I 5 ¡4 0 /D im e n s io n s (U n it: mm)
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2sb13442sd2025o-220fpsc-67+2f--10mhzl2505
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IMX5T108
Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855
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2sa1543m2sa15492sa15542sa1809+162sa18612sa18862sa8062sa825s2sb10082sb1033imx5t108dtc144en4ae12mp5c022sb1043icp-s2.3tndta115efdta144tsatpdtc124evammst8598t146
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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NEC 1357
Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Contextual Info: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft
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2sd13402sd13412sd13422sd869+162sd8202sd8702sd8212sd8712sd5532sd1173nec 1357sd 13512sd13702sd869 toshibanec 2sd2882sc4329d13512sd19442sc3252k 1358
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2sk2503rk7002tc363tsdtc314ts+14tc114g100mata124gdtc144gd2396transistor pnp b1443d2396 equivalentb1569atransistors pnp 50 v 1 a b1443b1186atransistor c5147b1344transistor equivalent b1443k2460
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