2SC4505 Search Results

MARKING CODE 15

Abstract: 2SA1759 2SC4505 T100
Contextual Info: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

marking code transistor ND

Abstract: marking code MPT3 transistor surface mount ND
Contextual Info: 2SC4505 Transistor, NPN Features • available in MPT3 MPT3, SOT-89, SC-62 package • package marking: 2SC4505; CE^, where ★ is hFE code • high voltage BVCE0 = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for lc/lB = 10 mA/1 mA

2SA4505

Abstract: C4505
Contextual Info: 2SA1759 2SC4505 / 2SC4620 Transistors High-voltage Switching Transistor Camera strobes and Telephone, Power supply I 2SA1759 # Features 2) 3) 4) 5) • \ Absolute maximum ratings (Ta“ 2 5 t ) High breakdow n voltage. ( V c e o = — 400V ) Low Vcetsa?). (T yp .—0.2 V at Ic /Ib = —2 0 /— 2m A)

2SA1759

Abstract: 2SC4505 2SC4620
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SC4620

Abstract: 2SA1759 2SC4505 T100 pw 10m pw10m
Contextual Info: 2SC4505 / 2SC4620 Transistors Power Transistor 400V, 0.1A 2SC4505 / 2SC4620 zExternal dimensions (Unit : mm) MPT3 0.5 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.

2SC4505 spice model

Abstract: TR MJE 350 2SC4505 transistor mje 350
Contextual Info: SPICE PARAMETER 2SC4505 by ROHM TR Div. * 2SC4505 NPN BJT model * Date: 2006/11/24 .MODEL 2SC4505 NPN + IS=350.00E-15 + BF=221.52 + VAF=13.557 + IKF=.15259 + ISE=350.00E-15 + NE=1.3284 + BR=5.0362 + VAR=100 + IKR=29.591E-3 + ISC=80.066E-12 + NC=1.4650 + NK=.79752

Contextual Info: 2SC4505Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

smd 0.5 400v

Abstract: 2SC4505
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4505 Features High breakdown voltage. BVCEO = 400V Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25

K 4005 transistor

Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Contextual Info: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for

2SC4505

Abstract: 40X40X0
Contextual Info: h 7 'y v 2SC4505 $ /T ransistors 2SC 4505 Triple Diffused NPN Silicon Transistor 1S: >Jji^^ii|liffl/L o w Freq. Power Amp. Wfi^liiES/Dimensions Unit : mm 1) r a i H Œ T f e î o BVcEO= 400V 2) au?2êâin1IEEA'''(S;v<'o V c e (sat)=0.05V (Typ.) (lc /lB = 1 0 m A /1 m A )

RL15K

Contextual Info: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.

2SA1759

Abstract: 2SC4505 2SC4620 A324
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305

D352 transistor

Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 9697a 96-596-A74 transistor D212
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Transistors 2SA1797 / 2SB1443 2SC4672 (96-100-B208) (96-181-D208) 291 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297

Contextual Info: 2SC4505 / 2SC4620 Transistors Power Transistor 400V, 0.1A 2SC4505 / 2SC4620 zExternal dimensions (Unit : mm) MPT3 0.5 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.

Contextual Info: 2SA1759 2SC4505 / 2SC4620 Transistors High-voltage Switching Transistor Cam era strobes and Telephone, Power supply 2SA1759 # Features \ Absolute maximum ratings (Ta=s25'C) 1) H ig h b re a k d o w n v o lta g e . 2) L o w VcE{sat). ( T y p .— 0 .2 V a t Ic/I b = — 2 0 / — 2 m A )

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

B1182

Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0