2SC457 Search Results

2SC4577

Abstract: npn 0401 transistor
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4577 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Small-sized package. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC4570

Abstract: xy 801 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL

Contextual Info: rdering number: EN3243 2SC4579 No.3243 NPN Triple Diffused Planar Silicon Transistor SMiYO 900V/20mA Switching Applications F eatures . High breakdown voltage •Small c0b • Wide ASO - High reliability Adoption of HVP process A bsolute Maximum R atings atT a= 2 5 e,C

TRANSISTOR D405

Contextual Info: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

2SC4572

Abstract: 11599HA EN3252A
Contextual Info: Ordering number:EN3252A NPN Triple Diffused Planar Silicon Transistor 2SC4572 800V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4572] 10.2

11599HA

Abstract: 2SC4579 ITR07237 ITR07238 ITR07239 ITR07240 ITR07241
Contextual Info: Ordering number:ENN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4579]

Q 1355

Abstract: 2SC4576
Contextual Info: Power Transistors 2SC4576 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.5±0.5 • Absolute Maximum Ratings Parameter Collector to base voltage 1.5±0.2 Symbol Ratings VCBO Unit 1400 V 1400 V VCEO 700

Contextual Info: Ordering number:ENN3197 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1753/2SC4577 Low-Frequency General-Purpose Amplifier Applications Package Dimensions • Small-sized package permitting the 2SA1753/ 2SC4577-applied sets to be made small and slim. · Low collector-to-emitter saturation voltage.

2SC4578

Abstract: EN3242
Contextual Info: Ordering number: EN3242 I No.3242 _ 2SC4578 NPN Triple Diffused P lanar Silicon Transistor 900V/50mA Switching Applications F e a tu re s . High breakdown voltage • Small Cob • Wide ASO • High reliability Adoption of HVP process A bsolute M axim um R atings at Ta = 25°C

2SC4576

Contextual Info: Power Transistors 2SC4576 2SC4576 Silicon N PN Trip le-D iffu sed Planar Type Package D im ensions High Breakdow n V oltage, High Speed S w itching • Features • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e VCbo • W ide a re a o f sa fe ty o p e ra tio n (ASO)

transistor zo 607

Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS

Contextual Info: Power Transistors 2SC4576 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.5±0.5 4.5±0.2 Parameter Collector to base voltage Symbol Ratings VCBO Unit 1400 V VCER 1400 V VCEO 700 V Emitter to base voltage

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2SA753

Abstract: EN3197 2SA17 2SA1753 2SC45 2SC4577 transistors 2SA 2SA POWER TRANSISTORS
Contextual Info: Ordering number: EN 3197 2SA1753/2SC4577 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications Features •Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.

2SC4607

Abstract: 2SC4614 2SC4596 2sc4622 2SC4621 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574
Contextual Info: - 208 - Ta=25‘C. *EpfáTc=25cC 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4578 2SC4579 2SC4580 2SC4581 2SC4582 2SC4589 2SC4591 2SC4592 2SC4593 2SC4594 2SC4595 2SC4596 2SC4597 2SC4598 2SC4599 2SC4600 2SC460Î 2SC4602 2SC4603 2SC4606 2SC4607

11599HA

Abstract: 2SC4579 EN3243
Contextual Info: Ordering number:EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4579]

11599HA

Abstract: 2SC4578
Contextual Info: Ordering number:EN3242 NPN Triple Diffused Planar Silicon Transistor 2SC4578 900V/50mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4578]

Contextual Info: Ordering number:ENN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4579]

2SC4573

Contextual Info: hZ7> y Z £ /Transistors 2SC4573 x 2SC4573 * > rJ i'y 'l'-i-M NPN >';=]> > V7, $ h7 Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. 1) □ U • 'S '— X Hfl C 6 0 V CO 7 ±-•#■1*- x • J f i'iiiE l/ D im e n s io n s (U n it: mm)