2SD2114K Search Results

TRANSISTOR C107

Abstract: c107 TRANSISTOR C107 IMX9 "dual TRANSISTORs" "General Purpose Transistor" c107 TRANSISTOR equivalent NPN Silicon Epitaxial Planar Transistor 2SD2114K 96517
Contextual Info: Transistors General purpose transistor isolated dual transistors IMX9 FFeatures 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor 2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Dimensions (Unit : mm) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

7826 Transistor

Abstract: marking code Sk transistors
Contextual Info: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2114K

Abstract: 2468 912E BF-1 Q2SD2114K
Contextual Info: SPICE PARAMETER 2SD2114K by ROHM TR Div. * 2SD2114K NPN BJT model * Date: 2006/12/06 .MODEL 2SD2114K NPN + IS=1.5000E-12 + BF=1.0520E3 + VAF=36.700 + IKF=3.2468 + ISE=1.5000E-12 + NE=2.3002 + BR=52.730 + VAR=100 + IKR=.37406 + ISC=1.7779E-12 + NC=2.1499

Contextual Info: Transistors IC SMD Type Product specification 2SD2114K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Low VCE sat . +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SD2114K

Contextual Info: Transistors IC SMD Type Power Transistor 2SD2114K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 Low VCE sat . 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: 2SD2114K Datasheet NPN 500mA 20V Muting Transistors lOutline Parameter Value VCEO IC 20V 500mA SMT3 Collector Base Emitter 2SD2114K SOT-346 SC-59 lFeatures 1) High DC current gain. hFE =2700 (Max.) 2) High emitter-base voltage. VEBO is Min. 12V 3) Low VCE(sat)

Contextual Info: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1

TRANSISTOR C107

Abstract: c107 TRANSISTOR c107 2SD2144S vebo -15 2SD2114K vebo c107 TRANSISTOR equivalent
Contextual Info: Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FExternal dimensions (Units: mm)

Contextual Info: Transistor, dual, NPN IMX9 Dimensions Units : mm Features • available in SMT6 (IMD, SC-74) package • package marking: X9 • package contains two independent NPN transistors (2SD2114K) • same size as SMT3 (SMT, SC-59), so same placement machine can be

2SD2144S

Contextual Info: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S • F e a tu re s • E x te rn a l d im en sion s (Units: mm) 1 ) High D C current gain. hFE = 1200 (Typ.) 2SD2114K 2.9±0.2 ! V ebo = 1 2 V (Min.) 3) 1 1+02 ” - 0.1 I ,1-9±0-2

2SD2114

Contextual Info: 2SD2114K h "7 > V Z. $ / I ransistors A Q Q A J « w U f c 1 " 4 y lJ 3 > K • “ "V V ÿ > v * $ Epitaxial Planar NPN Silicon Transistor 4, H2J*ËIlli£î/'M eclium Power Amp. • i ’t-Jfivtii 0 /D im e n s io n s Unit : mm 1) hFE * ' ' s i ' o h FE =

transistor c107 m

Abstract: TRANSISTOR C107 c107 transistor 1MX9 96517 transistor a 953
Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMX9 •External dimensions (Units: mm) •F e a tu re s 1) Two 2SD2114K chips in an SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­

2SD2114K

Abstract: T110 SC-74 X9 IMX9
Contextual Info: IMX9 Transistors General purpose transistor isolated dual transistors IMX9 zExternal dimensions (Units : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 (2) (1) +0.1 0.3 −0.05 (3) 2.8±0.2 (5) +0.2 −0.1 (4) 0~0.1 +0.1 0.15 −0.06 All terminals have same dimensions

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL