2SD209 Search Results

2SD2095

Contextual Info: Product Specification www.jmnic.com 2SD2095 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P H IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications

2SD2095

Contextual Info: SavantIC Semiconductor Product Specification 2SD2095 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications

Contextual Info: 2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage

transistor D2092

Abstract: d2092 2SD2092
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Maximum Ratings (Tc = 25°C)

2SD2092

Abstract: 2SD2092 equivalent
Contextual Info: TOSHIBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS • • 10 ±0.3 r High DC Current Gain : hpg i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.)

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

Contextual Info: 2SD2099 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.5 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition)

c 5802 transistor

Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
Contextual Info: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o

2sd2092

Abstract: 2SD2092 equivalent
Contextual Info: TO SH IBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hpE i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.) J O •

2sd2092

Abstract: 2sd209
Contextual Info: TO SH IBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hpE i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.) J O •

SOT89 transistor marking 4A high frequency

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD2098PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A)

transistor D2092

Abstract: 2SD2092 D2092
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C)

2SD2097

Contextual Info: 2SD2097 Transistor, NPN Features Dimensions Units : mm available in ATV TV2 package 2SD2097 (ATV TV2) low collector saturation voltage, VCE (sat)=l V (max) at Ic/Ib = 4 A/0.1 A excellent current-to-gain characteristics (2) Collector (3) Base Absolute maximum ratings (Ta = 25°C)

8002 AUDIO amplifier

Abstract: 2SD2096
Contextual Info: 2SD2096 Transistor, NPN Features • available in HRT package • low collector saturation voltage, typically VCE sat = 0.3 V at Ic/Ib = 2A/0.2A Dimensions (Units : mm) • • • 2SD2096 (HRT) 8.0±0.2 4.5 ±0.2 excellent current-to-gain characteristics

Contextual Info: Transistors IC SMD Type Product specification 2SD2099 Features Contains input resistance R1 , base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity,

MARKING SMD npn TRANSISTOR DJ

Abstract: smd transistor marking dj marking DJ SMD 2SD2098 SMD Transistor dj DJ SMD DJ* marking 2SD2098
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1

2sd209

Abstract: diode marking DL MARKING SMD npn TRANSISTOR 1a smd diode marking 2a npn smd 2a marking DL diode smd diode marking 2v smd marking DL smd transistor MARKING 2A npn 2SD2099
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2099 Features Contains input resistance R1 , base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity,

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

2sd2098R

Abstract: 2SD2098 2SD2098Q ahr transistor
Contextual Info: 2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25%C Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 6.0 Vdc

2SB1394

Abstract: 2SD2099
Contextual Info: Ordering number:EN3174B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1394/2SD2099 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.

relay 5v 5a, 5 pin

Abstract: 2SB1388 2SD2093 2SD209
Contextual Info: SavantIC Semiconductor Product Specification 2SD2093 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·DARLINGTON ·Complement to type 2SB1388 ·High DC current gain ·Low saturation voltage ·Large current capacity and large ASO APPLICATIONS

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

O-50L

Contextual Info: h* ~7 > 7s ^/Transistors V 2SD2098 2SD2098 Epitaxial Planar NPN Silicon Transistors 7. h P ^ '7 7 V y iffi/Storobo Flash • w* 1WfixfàilSI/Dimensions Unit : mm 1) VcE(sat) V c E (s a t)= 1 V (Max.) I .6 + 0.I (IC /lB = 4 A /0 .1 A ) 2) +I * m 4 r r V î ! :

2SB1388

Abstract: 7204 npn D2093 2SB13 2SD2093
Contextual Info: ^Ordering number: EN3720 2SB1388/2SD2093 2SB1388 : P N P Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors D river A pplications A p plications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.