TRANSISTORS Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

ND06

Contextual Info: TD62801P BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62G01P 8 BIT SHIFT REGISTER/LATCH/DRIVER THERMAL HEAD DRIVER Features • 8 Bit Serial-In Parallel-Out Shift Register/Latch/ 8 Bit Driver Transistors. • Output Current . 70 mA Max.

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

str f 6454

Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
Contextual Info: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

texas instruments tip34

Abstract: texas instruments tip33 TIP33C
Contextual Info: TYPES TIP33, TIP33A, TIP33B. TIP33C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X O H m c< tj r FO R POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGN ED FOR COM PLEM ENTARY USE WITH TIP34, TIP34A, TIP34B, TIP34C • 80 W at 25° C Case Temperature

2n2432a

Abstract: 2n2432
Contextual Info: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

TIS69

Abstract: TIS70 tis70 texas instruments
Contextual Info: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit

Contextual Info: TOSHIBA TENTATIVE TA8303F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 8303F MOTOR DRIVER FOR CAMERA TA8303F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped Bias resistor and FreeW heeling diode. This 1C is suitable for a camera use motor drive

Contextual Info: TOSHIBA TENTATIVE TA8317F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP T A 8 i 1 7 F • m m m f ■ m m LED DRIVER FOR CAM ERA TA8317F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor. This IC is suitable for a camera use LED drive

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

MG25N6EK1

Abstract: ij98
Contextual Info: MG25N6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. Unit in mm 13.5 13.5 . 6 Power Transistors and 6 Free Wheeling Tolerance is ± Q 5 m m unless Diodes are Built Into 1 Package.

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

2N5885

Abstract: 2N 5883 2n 5886
Contextual Info: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current

TIP34C

Abstract: tip34
Contextual Info: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS 33 » H mC < D f B rp m FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -S W IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP33, TIP 33A , TIP33B, TIP33C

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

2N3806

Abstract: 2N3807 NS2N 2N3808 2n 3808 2N3809 2n3811
Contextual Info: TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 72 11686. M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E R E C O M M E N D E D FOR • Differential Amplifiers • High-Gain, Low-Noise Amplifiers • Low-Level Flip-Flops

4328T

Contextual Info: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit

2N5222

Abstract: A6T5222 A6T52
Contextual Info: TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 9 , M A R C H 1973 S IL E C T t T R A N S IS T O R S t • For RF Am plifier, Mixer, and Video IF Applications in Radio and Television Receivers • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil