2N730 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

Contextual Info: HARRIS SEMICON] SECTOR SfiE D • M3QEE71 DDMS772 GIT B H A S 2N7305D, 2N7305H 2N7305H HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H) Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Features • 17A, 500V, RDS{on) x 0.400»

Contextual Info: HARRIS SENICOND SECTOR 30 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK260 D, R, H • 4 3 0 2 27 1 0 0 4 5 7 b 2 17G H H A S 2N7301D, 2N73U1H 2N7301H Radiation Hardened N-Channel Power MOSFETs December 1992 T & f- iS

low range photo transistor

Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

2N7308

Contextual Info: H A R R IS SEMI CONDUCTOR REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 5A, -100V, ROS(on) = 0.550n TO-205AF • Second Generation Rad Hard MOSFET Result* From New Design Concepts

Contextual Info: HARRIS SEfllCOND S E C T O R CSÎ h a f r f r is U U bSE T> m 4302271 OGNIDbb D O 6] H H A S 2N7302D, 2N7302R S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H juneigg3 Features . Radiation Hardened N-Channel Power MOSFETs

R6S DIODE

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 6A,-100V, RDS(on) = 0.550U TO-2Q4AA • Second Generation Rad Hard MOSFET Result« From New Design Concepts

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: 2N7301R4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)46 I(DM) Max. (A) Pulsed I(D)29 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

Contextual Info: 2N7301R1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)46 I(DM) Max. (A) Pulsed I(D)29 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

2n731

Abstract: 2N718 2n1413 2n697
Contextual Info: TYPES 2M6ifo. ¿Wise* 8. 2N730, 2N731, 7N9S6 :^ v i? n 2N1613. 2NT711 N-P-N SILICON TRANSISTORS ‘/ . K W . ; > . M 1 ¿ m b ? m w k , - l ; . B U L L E T I N N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed lor

2E12

Abstract: 2N7309D 2N7309H 2N7309R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9130 D, R, H 2N7309D, 2N7309R 2N7309H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.565Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7300D 2N7300H 2N7300R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE160 D, R, H 2N7300D, 2N7300R 2N7300H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 41A, 100V, RDS(on) = 0.050Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N73A

Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

Contextual Info: HARRIS SEniCOND A R Sf i E SECTOR Cm H U U S E M I C O N D U C T O R R IS REGISTRATION PENDING Currently Available as FRS9130 D, R, H December 1992 . - D • M3 Q2 S 7 1 D D 4 5 7 AE Tb^ HHAS 2N7309D, 2N7309R 2N7309H - Radiation Hardened P-Channel Power MOSFETs

Contextual Info: bSE âf i ï ï w S » U l / s e m i c o n d u c t o r 2N7300D, 2N7300R , z REGISTRATION PENDING Currently Available as FREI 60 D, R, H ) A / 7 / 1 / 1 L f ¡ ¿ N i ¡ fU U tl HARRIS SEMICOND SECTOR l. -i Radiation Hardened N-Channel Power M OSFETs June 1993

Contextual Info: HARRIS SEUICOND SECTOR bSE T> m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H M3GES71 DÜH1D71 47b « H A S 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs June 1993 Package Features • 6A, -100V, RDS(on) • 0JS50Q

1E-14

Contextual Info: m HARRIS S E M I C O N D U C T O R PRELIMINARY REGISTRATION PENDING Currently Available as FRE260 D, R, H 2N7302D, 2N7302R 2N7302H Radiation Hardened N-Channel Power MOSFETs January 1993 Package Features • 31 A, 200V, RDS(on) = 0.080Q TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

2n7304

Abstract: 1E14 2E12 2N7304D 2N7304H 2N7304R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE264 D, R, H 2N7304D, 2N7304R 2N7304H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 23A, 250V, RDS(on) = 0.130Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

3E12

Abstract: 2E12 2N7306D 2N7306H 2N7306R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE460 D, R, H 2N7306D, 2N7306R 2N7306H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 12A, 500V, RDS(on) = 0.410Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7307D 2N7307H 2N7307R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7303R

Abstract: 1E14 2E12 2N7303D 2N7303H 1E13n
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK264 D, R, H 2N7303D, 2N7303R 2N7303H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 34A, 250V, RDS(on) = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

small signal transistors

Contextual Info: 2N730 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N730 Tj hFE max 60 hfe Notes VCBO 60 hFE A 150m fT 40 Polarity NPN VCEO 40