2E12 Search Results

150LPI

Contextual Info: KE-2E12 エンコーダ ENCODERS KE-2E12-15/18/30 KE-2E12シリーズは業界で初めての薄さ h＝6.55ｍｍ を実現した「光学式エンコーダ」です。発光素子および受光 フォト を取り揃え

Contextual Info: ⭯ဳశቇᑼࠛࡦࠦ࡯࠳‫ޓޓ‬ENCODERS KE-2E12-15/18/30 150/180/300 LPI -''ࠪ࡝࡯࠭ߪᬺ⇇ߢೋ߼ߡߩ⭯ߐ J㧩㨙㨙 ࠍታ⃻ߒߚ‫ޟ‬శቇᑼࠛࡦࠦ࡯࠳‫⊒ޕߔߢޠ‬శ⚛ሶ߅ࠃ߮ ฃశࡈࠜ࠻+%ߦ⥄␠⵾ຠࠍណ↪ߒߡ߅ࠅ‫ޔ‬㜞ຠ⾰‫ޔ‬ᷣ

Contextual Info: KE-2E12 KE-2E12-15/18/30 *2 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. KE-2E12 KE-2E12-15/18/30 Duty/Gap Duty/Gap

Contextual Info: KE-2E12F KE-2E12F-15/18/30 *2 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. KE-2E12F KE-2E12F-15/18/30 Duty/Gap Duty/Gap

4D4B44

Abstract: 4D4B41 2SR1K 4D4B41A 4G4B44 3D4B41 4b4b41 4J4B41 4b4b44 3J4B41
Contextual Info: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A

4B4B41

Abstract: 4D4B44 4G4B41 4G4B44 4D4B41 3B4B41 4B4B44 3D4B41 T 4B4B41 4J4B41
Contextual Info: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A

Contextual Info: KE-2E12F エンコーダ ENCODERS KE-2E12F-15/18/30 KE-2E12Fシリーズは業界で初めての薄さ h＝6.55ｍｍ を実現した「光学式エンコーダ」です。発光素子および受 光フォト を取り揃

4b4b41

Abstract: 4D4B41 4G4B41 4J4B44 4B4B44 4D4B44 3D4B41 3B4B41 3G4B41 2D4B41
Contextual Info: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A

4B4B41

Abstract: 4G4B41 4D4B41 3B4B41 bs 140 T 4B4B41 3D4B41 4B4B44 4G4B44 3G4B41
Contextual Info: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A

4D4B44

Abstract: 2SR1K T 4B4B41 4B4B44 638A 3B4B41 4G4B44 4b4b41 4J4B44 3D4B41
Contextual Info: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A

Contextual Info: ⭯ဳశቇᑼࠛࡦࠦ࡯࠳‫ޓޓ‬ENCODERS KE-2E12F-15/18/30 150/180/300 LPI ‫ޓع‬ᄖᒻኸᴺ‫&ޓ‬+/'05+105 -''(ࠪ࡝࡯࠭ߪᬺ⇇ߢೋ߼ߡߩ⭯ߐ J㧩㨙㨙 ࠍታ⃻ߒߚ‫ޟ‬శቇᑼࠛࡦࠦ࡯࠳‫⊒ޕߔߢޠ‬శ⚛ሶ߅ࠃ߮

2VP5U9

Abstract: 2E12R9 2vp5u9 lan-pac 2SP12U9 2VP12U9 2VI5U9 2E12 2E12R9E MTH/2E12R9
Contextual Info: FE A TU R E S 9 IEEE 802.3 standards 0 Meets FCG Sec 15, Sub Part J, Â&B 9 Input/O utput isolated to IEEE 802.3 standards PC mountable, low profile ® Continuous short circuit protected, self recovering 2E12R9, 2Ë12R9E and 2E5R9 ® No derating to 71°C

0066E

Abstract: 014e1
Contextual Info: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance

SP3002-04JTG

Abstract: sp3002 IEC61000-4-4
Contextual Info: Silicon Protection Arrays TM Low Capacitance ESD Protection Array RoHS Pb GREEN SP3002 Lead-Free/Green Series Description The SP3002 has ultra low capacitance rail-to rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin

2E12R9

Abstract: RELIABILITY INC 2vp5u9 lan-pac 2VP12U9 2E12R9E 2SP12U9 QDDG101 2vp5u9
Contextual Info: H B8Sn&9SSSSB88BBSa R E L IA B IL IT Y IN C / POWER 5 SE D • 7bS2610 QOaDD'i? S FEATURES • IE E E 802.3 standards 6 Meets F GO Sec 15, Sub Part J, A&B • In p u t/O u tp u t isolated to IËEÉ 802.3 standards PC mountable, low profile • -Continuous short circuit p rote cte d ,

FSGYE130R4

Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

1h32

Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
Contextual Info: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

2E12R9

Abstract: pm7102 2vp5u9 EE 35 transformer 10BASE5 PE-64107 valor pm7102
Contextual Info: Am7996 Advanced Micro Devices IEEE 802.3/Ethernet/Cheapernet Transceiver DISTINCTIVE CHARACTERISTICS • ■ ■ Compatible with Ethernet Version 2 and IEEE 802.310BASE5 and 10BASE2 specifications Pin-selectable SQE Test Heartbeat option Internal Jabber Controller prevents excessive

Contextual Info: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries

UPA833TF

Abstract: q2.048
Contextual Info: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or