1E14 Search Results

transistor 8730

Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT

ad8561 precautions

Abstract: AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16
Contextual Info: a Dual 7 ns Single Supply Comparator AD8598 FEATURES 7 ns Propagation Delay Single Supply Operation: +3 V to +10 V Low Power Symmetrical Layout Latch Function TSSOP Packages PIN CONFIGURATIONS N-16, RU-16 and R-16A OBS APPLICATIONS Clock Recovery and Clock Distribution

radix-8 FFT

Abstract: DBGA KD 472 M mov CMAC A15B2 sc sf 12A H4 17ER CI23 honeywell hx3000 HX3000
Contextual Info: DSP Architectures RHDSP24 Radiation Hardened Scalable DSP Chip Transform Your WorldTM Data Sheet Real 24 PORT A Imag 24 RHDSP24 Imag 24 24 24 X INPU TB US Y INPUT BU S O U TP U TB US 24 48 Imag 24 Scheduler/ Controller X Y Memory A 24 Memory B 24 System Controls

in4577

Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Contextual Info: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

1h32

Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
Contextual Info: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

UT8MR8M8

Contextual Info: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet May 14, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times

UT8MR8M8

Abstract: aeroflex sram ecc
Contextual Info: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet March 15, 2012 FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times

UT200SPW

Contextual Info: Standard Products UT200SpW4RTR 4-Port SpaceWire Router Preliminary Datasheet April 13, 2011 www.aeroflex.com/SpaceWire FEATURES  Operational environment: - Total-dose: 100 krad Si - Latchup immune (LET >100 MeV-cm2/mg)  Packaging options: - 255-lead CLGA

Q1104

Abstract: NE72218
Contextual Info: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1

Contextual Info: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters

Contextual Info: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA

1E-14

Contextual Info: NONLINEAR MODEL SCHEMATIC NE434S01 CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.62nH Rdx 3 ohms Rgx 0.72nH 3 ohms Lsx 0.07nH CGS_PKG 0.05pF CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.806

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E-14

Abstract: 1E14 MAX4214 MAX4215 MAX4217 MAX4219 MAX4222 1P NPN 2 A 98 10E4 diode
Contextual Info: * * * * * * MAX4214 FAMILY MACROMODELS -FEATURES: 230MHz Gain Bandwidth Product 5.5mA Typical Supply Current Rail-to-Rail I/O * Available in 5-Pin SOT23 MAX4214 * 8-Pin uMAX/SO (MAX4217) * 14-Pin SO/16-Pin QSOP (MAX4222) * * PART NUMBER

1E14

Abstract: 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS244D, FRS244R, FRS244H 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 250V, RDS on = 0.415Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4
Contextual Info: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

FSGYC260R3

Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

LSE B3 transformer

Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
Contextual Info: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

FRF9250R

Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Contextual Info: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both