NE68530 Search Results

Contextual Info: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries

UPA833TF

Abstract: q2.048
Contextual Info: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AN1017

Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
Contextual Info: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead

cce 7100

Abstract: transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518
Contextual Info: NE685 SERIES NEC'S SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor d 13009

Abstract: 9622 transistor t 3866 power transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA

NE68018

Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10

ha 7741

Abstract: UPA833TF 13924 IC 7487
Contextual Info: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,

HE 85500

Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW CO ST • SM A LL AND ULTRA SM ALL SIZE PACKAGES • LOW VO LTA G E/LO W CU R R EN T OPERATION • HIGH GAIN BANDW IDTH PRODUCT: fT o f 12 GHz • NO ISE FIG UR ES O F 1.5 dB AT 2.0 GHZ

cce 7100

Abstract: 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE

NE85630

Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

NE68019

Abstract: NE68839 NE68018 NE68719
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3

014e1

Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ

MJE 13031

Abstract: 054S1 cd 4637
Contextual Info: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA

ta 8653 n

Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

ka 2843

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA

cce 7100

Abstract: 85500 transistor br 8764 NE685 NE68530 cce 7100 1053 BJT BF 167 BJT IC Vce 2SC4959 2SC5010
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE