SM 3119 N
Abstract: 6681 - 250
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0.1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA
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upa835tfne685ne856pa835tf-t1+324-hoursm 3119 n6681 - 250
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ta 8653 n
Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA
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upa835tfne685ne856ne68530+8ne85630upa835tf-t1upa832tfta 8653 nha 1452 amplifiersic 8208ha 12045ic max 8997
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ka 2843
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA
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upa835tfne685ne856ne68530+4ne85630upa835tf-t124-hourka 2843
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k 2611 transistor 3pin
Abstract: tp 4058 kf 203 e 011 transistor PA835
Contextual Info: PRELIMINARY DATA SHEET UPA835TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P ackage O u tlin e TS06 (T o p View) Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA
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upa835tfne685ne856ne68530+7ne85630upa835tf-t124-hourk 2611 transistor 3pintp 4058kf 203 e 011 transistorpa835
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Contextual Info: NONLINEAR MODEL UPA835TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 6e-16 MJC 0.34 0.55 BF 109 120 XCJC 0.3 NF 1 0.98 CJS 0.75 VAF 15 10 VJS 0.75 IKF 0.19 0.08 MJS ISE 7.9e-13 32e-16 FC 0.5 0.5 12e-12 NE 2.19 1.93 TF 2.5e-12
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upa835tf7e-169e-134e-12+618e-126e-1632e-1696e-48e-121e-12
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transistor d 13009
Abstract: 9622 transistor t 3866 power transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA
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upa832tfne856ne685ne85630+7ne68530upa835tfupa832tf-t124-hourtransistor d 130099622 transistort 3866 power transistor
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7483 IC
Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA832TF-T1 UPA835TF IC 566 vco
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
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upa832tfne856ne685ne85630+7ne68530upa835tfupa832tf-t124-hour7483 ics21eic 566 vco
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transistor d 13009
Abstract: IC 566 vco transistor j 13009 IC 8085 pin
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■
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upa832tf1s21ei2ne856ne685+8ne85630ne68530upa835tfupa832tf-t1transistor d 13009ic 566 vcotransistor j 13009ic 8085 pin
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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transistors ON 4673
Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
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upa835tfne685ne856upa835tf-t1+7ne68530ne85630upa832tf24-hourtransistors on 4673s21epin ic 7479
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sem 5025
Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Contextual Info: PRELIMINARY DATA SHEET S ilico n T ransistor uPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1
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upa835tfipa835tf2sc49592sc4226+4sem 5025ic 4440 for audio amplificationpe 5571nec 9736
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UPA827TF
Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T
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upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363
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