3E12 Search Results

Contextual Info: 3U CompactPCI Peripheral Cards / PMC Modules cPCI-3E10/3E12 cPCI-3544 3U CompactPCI 2/4-Port Gigabit Ethernet Card 4-Port RS-422/485 Isolated Serial Communications Card ® 3U cPCI Blades PICMG 2.0 R3.0 compliant Supports 32bit/33MHz, 66bit/64MHz CompactPCI® bus

Contextual Info: 3E10 3E10: 3E12 3E12: A high permeability material optimized for use in wideband transformers as well as EMI-suppression filters The best The highest process impedance control with and extended permeability bandwidth 3E10 achieves the tightest tolerance in your final product only 20% , so

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-3E12UW Package Dimensions : Features : 1. Emitting area : 18.78x5.85 mm 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. 19.80 .780

BA-3E12UW

Contextual Info: BRIGHT LED ELECTRONICS CORP. BA-3E12UW SINCE 1981 ● Features : 1. Emitting area : 18.78x5.85（mm） 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions :

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF

ARM926T

Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Contextual Info: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

ad8561 precautions

Abstract: AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16
Contextual Info: a Dual 7 ns Single Supply Comparator AD8598 FEATURES 7 ns Propagation Delay Single Supply Operation: +3 V to +10 V Low Power Symmetrical Layout Latch Function TSSOP Packages PIN CONFIGURATIONS N-16, RU-16 and R-16A OBS APPLICATIONS Clock Recovery and Clock Distribution

Contextual Info: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 VAF 15 VJS IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

E137938

Abstract: 3E50 1E35 1E125UM
Contextual Info: Standard Pack: 12 Weight: 0.3A - 32A 1.8kg 3.97 lb. 40A - 63A 1.98kg (4.37 lb.) Two Pole Standard Pack: 6 Weight: 0.3A - 32A 1.8kg (3.97 lb.) 40A - 63A 1.98kg (4.37 lb.) Rated Current 0.3A 0.5A 0.75A 0.8A 1.0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 6.0A 8.0A

INA115E

Abstract: 115E 20E6 INA115
Contextual Info: * INA115E = 2 x A1_115E + A3_115E OP AMPS + PRECISION RESISTOR NETWORK * CREATED ON 1/10/94 BY JLA * REV.A * NODE ASSIGNMENTS OF SUBCKT INA115 CORRESPOND TO SURFACE MOUNT PACKAGE OF * BURR-BROWN'S INA115 NO DIP AVAILABLE * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

pwm 20khz duty welding

Abstract: CS01 PPL-21
Contextual Info: L-Series High Reliability Radiation Tolerant DC/DC Converters DESCRIPTION FEATURES The L-Series of DC/DC converters are radiation tolerant, high reliability devices designed for moderate radiation environments such as those encountered by low earth orbit satellites and launch vehicles. For higher radiation

neutron detector

Abstract: ART2800T AWG21 bergquist ge
Contextual Info: PD - 94530A ARM28XXT SERIES 28V Input, Three Output ADVANCED ANALOG HYBRID - HIGH RELIABILITY 1 MEGA-RAD HARDENED DC/DC CONVERTER Description The ARM Series of three output DC/DC converters are designed specifically for use in the high-dose radiation environments encountered during deep space planetary missions. The extremely high level of radiation

AD8561S

Abstract: AD8561 ad8561 precautions transistor C3220 LT1016 AD8561AN AD8561AR AD8561ARU c3220
Contextual Info: a FEATURES 7 ns Propagation Delay at 5 V Single Supply Operation: 3 V to 10 V Low Power Latch Function TSSOP Packages APPLICATIONS High Speed Timing Clock Recovery and Clock Distribution Line Receivers Digital Communications Phase Detectors High Speed Sampling

2E12

Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Contextual Info: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1
Contextual Info: FSYA450D, FSYA450R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

5A12-7iR

Abstract: 5A10-7iR 368-7IR 246-7iR S09023 128-7iR 1287I 5A11-2 366-7iR
Contextual Info: PSC Series 6.12 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3.36 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Selection chart Output Uo nom Io nom

imperial m015

Abstract: BF253
Contextual Info: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage

op482arc/883

Abstract: OP482 smd 43e OP282 OP282G OP282GP OP282GS OP-482 OP482GP OP482GS
Contextual Info: a Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 FEATURES High Slew Rate: 9 V/␮s Wide Bandwidth: 4 MHz Low Supply Current: 250 ␮A/Amplifier Low Offset Voltage: 3 mV Low Bias Current: 100 pA Fast Settling Time Common-Mode Range Includes V+

TC124E

Contextual Info: FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

02e3

Abstract: SSM2135
Contextual Info: Dual Single-Supply Audio Operational Amplifier ANALOG DEVICES SSM2135 FEATURES Excellent Sonic Characteristics High O utput Drive Capability 5.2 nV/VHz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 M Hz Gain Bandwidth U nity-G ain Stable

2E12

Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current