T1P122
Abstract: PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP125 TIP140F TIP141F rtip141
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC O | 7 cU , 4 1 4 a 0007740 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 26 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to T1P121 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage
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o-220tip125p140t/141t/142tt-33-29+10t1p140--jt1p14vt1p122pnp power transistor t1p122pnp power transistor to220t1p142ftip1411t1p142tip140ftip141frtip141
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T1P127
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT T1P121 TIP127 TIP126 circuit T1P-127 TIP126 tip125 P126 TIP120
Contextual Info: TIP125 TIP126 TIP127 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio ou tp u t stages and general am plifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, T1P121
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tip125tip126tip127t0-220+8tip120t1p121tip122t1p127tip127 tip122 audio amplifier circuittip126 circuitt1p-127p126
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T1P121
Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating
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tip120tip121tip122tip125+7tip126tip127t1p121texas instruments tip122texas instruments tip127tip121 texast1p122
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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T1P121
Abstract: TIPI20 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT TIPI22 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
Contextual Info: TIP120 TIP121 TIP122 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. P-N-P complements are TIP125, TIP126
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tip120tip121tip122t0-220+7tip125tip126tip127t1p121tipi20tip127 tip122 audio amplifier circuittipi22
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T1P120
Abstract: TIPI22 T1P121
Contextual Info: PANASONIC INDL/ELEK -CIO 12E D 0010443 T • I T 33 '2<t Darlington Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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o-220t1p120tipi22-tip125+4tip126tip127059mmt1p121
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T1P121
Abstract: TIPI22 T1P125 TIP125 TIP126 TIP127
Contextual Info: 0D10M43 T 12 E D PANASONIC INDL/ELEK -CIO Darlington Silicon NPN Power Transistors TO-220 Package T - 3 3 ’ 2<1 Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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o-2200d10m43t1p121-tip125+6tip126tip12738swmctipi22t1p125tip125
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T1P31C
Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
Contextual Info: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)
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tp-220tas35t1p122tip130+11tip131tip132t1p31cb0239cbdxs3b0241ab0243b0243bt1p-31ct1p120bdxs3c
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T1P121
Abstract: T1P127 TIPI27 TIPI22 TIPI20 TIPI25 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ (§> le = 4.0 Adc • Coilector-Emitter Sustaining Voltage — @ 100 mAdc
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tip120tip125tip121tip126+13tip122tip127o-220abt1p121t1p127tipi27tipi22tipi20tipi25t1p126tip122 motorolaof transistor tip122tip121.tip122
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Contextual Info: TIP120 TIP121 TIP122 _/ V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are TIP125, TIP126
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tip120tip121tip122o-220+4tip125tip126tip127tip127 tip122 audio amplifier circuit
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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