BDXS3 Search Results

Contextual Info: SGS-THOMSON !LiM iO gS bdxs3F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE . COMPLEMENTARY PNP - NPN DEVICES • MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A P P L IC A T IO N S

BOX53C

Abstract: Bow94c box33c BOW94CH B0X54C BDXS38 BOX54B B0X54 BU508 225/B0X54C
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE V cbo V ceo N PN PNP BD909 BD910 BD911 BD912 BDW51C BDW52C BDW83C BDWB4C BDW93B BDW93C BDW93CP1 BÎHS941B BOW94C BOW94CH e m m BOX33C BDX34B BDX34C BDX53A BDXS38 BD^33BFI BOX53C BDX53F BOX54BFI B0X54C BDX54F BDX67C

BDXS3C

Abstract: BDXS3 BDX54 DX54C transistor bdx54c
Contextual Info: BDX54/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINEAR AND SWITCHING APPLICATIONS • Com plement to BDX53, BDX53A, BDX53B and BDXS3C respectively T O -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic

T726

Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Contextual Info: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature

BDXS3C

Abstract: bdx64
Contextual Info: , Line, J. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 PNP BDX54 BDX53A BDX54A BDX53B BDX54B BDX53C BDXS4C .designed for general-purpose amplifier and low speed switching

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

BDXS3

Abstract: BDXS Hammer D02017
Contextual Info: T -3 3 -2 ? Power Transistors. BDX53, BDX53A, BDX53B, BDX53C HARRIS SEMICOND SECTOR File Number M302271 G02017D H « H A S 27E D 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100 Volts, 60 W atts Gain of 750 at 3 A TERMINAL DESIGNATIONS Features: • Operates from IC without predrlver

T1P31C

Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
Contextual Info: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)

bdx538

Abstract: BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A
Contextual Info: MO TO RO LA SC 12E D I b3b?BS4 0004703 1 I X S T RS/R F • " NPN B0X53 BDX53A BDX53B BDX53C MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEM ENTARY SILICON TRANSISTORS DA RLIN G TO N 8 AMPERE .d e s ig n e d fo r general-purpose a m p lifie r and low-speed sw itc h in g

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.