BDX53 Search Results

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

L929

Abstract: BDX54S BDX53S G392
Contextual Info: 7 ^ 5 3 7 O O g f lM b q 1, I H - - SGS-THOMSON BDX53S BDX54S S 6 S-THOMSON 3 0 E ]> MEDIUM POWËR DARLINGTONS DESCRIPTION The BDX53S is a silicon epitaxial-base NPN tran­ sistor in monolithic Darlington configuration and is mounted in Jedec TO-39 metal case.

BOX 53C IC

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 VD151 54C20
Contextual Info: ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC = 4.0 Adc

Contextual Info: BDX54/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX53, BDX53A, BDX53B and BDX53C respectively ABSOLUTE MAXIMUM RATINGS Characteristic

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

ST BDX53C

Abstract: BDX53C Complementary Darlington Audio Power Amplifier BDX54C BDX54B 54B diode SILICON COMPLEMENTARY transistors darlington BDX53B
Contextual Info: BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 DESCRIPTION The BDX53B and BDX53C are silicon

BDX53

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1989 - REVISED MARCH 1997 Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C T0-220 PACKAGE TOP VIEW • 60 W at 25°C Case Temperature

BOX 53C darlington power transistor

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA
Contextual Info: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —

Schottky diode TO220 15A 1000V

Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

T726

Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Contextual Info: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature

BDX53BFP

Contextual Info: BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: • GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING DESCRIPTION The BDX53BFP is a silicon Epitaxial-Base NPN

BDX53

Abstract: BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 1 ■ Audio amplifiers

BDX54C

Abstract: BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B
Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

bdx54c equivalent

Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

BDX54F

Abstract: bdx54e
Contextual Info: f Z 7 S G S -T H O M S O N ^7# BDX53E/BDX53F BDX54E/BDX54F POWER DARLINGTONS D ES C R IPT IO N The BDX53E, BDX53F are silicon epitaxial base NPN transistors in monolithic Darlington configura­ tion and are mounted in Jedec T 0 -2 2 0 plastic package. They are intended for use in power linear

BDX53BFI

Contextual Info: SGS-THOMSON & *M IL iO T K S BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS: • GENERAL PURPOSE SWITCHING AND AMPLIFIER . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53BFI is silicon epitaxial-base NPN

bdx54 application

Abstract: BDX53A bdx53b bdx53c
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS . Complement to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage

BDX53BFP

Abstract: L434
Contextual Info: BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: • GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ FULLY MOLDED ISOLATED PACKAGE ■ 2000 V DC ISOLATION U.L. COMPLIANT DESCRIPTION The BDX53BFP is a silicon epitaxial-base NPN

equivalents transistor bdx53 bdx54

Abstract: BDX54C BDX53 equivalent BDX53c BDX53 BDX53A BDX53B BDX54 BDX54A BDX54B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C

Contextual Info: BDX53. BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C HL BDX53,53A, 53B, 53C BDX54,54A, 54B, 54C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications DIM E A B C D E r G H J f- i AltM- K

bdx54a

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

BOX 53C IC

Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

BDX53

Abstract: BDX53B
Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but