BDX54C Search Results

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

BOX 53C IC

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 VD151 54C20
Contextual Info: ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC = 4.0 Adc

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

ST BDX53C

Abstract: BDX53C Complementary Darlington Audio Power Amplifier BDX54C BDX54B 54B diode SILICON COMPLEMENTARY transistors darlington BDX53B
Contextual Info: BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 DESCRIPTION The BDX53B and BDX53C are silicon

BDX53

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1989 - REVISED MARCH 1997 Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C T0-220 PACKAGE TOP VIEW • 60 W at 25°C Case Temperature

BDX53

Abstract: BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 1 ■ Audio amplifiers

BDX54C

Abstract: BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B
Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BDX53C

Abstract: BDX53 BDX53A BDX53B BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

bdx54 application

Abstract: BDX53A bdx53b bdx53c
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS . Complement to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage

equivalents transistor bdx53 bdx54

Abstract: BDX54C BDX53 equivalent BDX53c BDX53 BDX53A BDX53B BDX54 BDX54A BDX54B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C

Contextual Info: BDX53. BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C HL BDX53,53A, 53B, 53C BDX54,54A, 54B, 54C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications DIM E A B C D E r G H J f- i AltM- K

bdx54a

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

BOX 53C IC

Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

BOX 53C IC

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100
Contextual Info: ON Semiconductort NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ @ IC = 4.0 Adc

BDX54

Abstract: BDX54C BDX54 circuit BDX53 BDX53A BDX53B BDX53C BDX54A BDX54B
Contextual Info: c i h ANSYS BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED • Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C • 60 W at 25°C Case Temperature • 8 A Continuous Collector Current TO-220 PACKAGE TOP VIEW

BDX54

Abstract: BDX54A BDX54B BDX54C BDX54 circuit
Contextual Info: TEXAS IN STR -COPTO} t.B r D E jflT b ^ E b DOatibEB _ S 9 6 1 T 2 6 TEX A S IN S T R O P T Ò T T-33-31 62C 3 6 6 2 3 D BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 • 60 W at 25°C Case Temperature

Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

dx53

Contextual Info: SGS-THOMSON MGMlLIOTIlMCt BDX53A/53B/53C BDX54A/54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN power transistors in

BDX53

Abstract: transistor bdx54c
Contextual Info: BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

obsolete ic cross reference

Abstract: transistor crossreference crossreference transistor
Contextual Info: BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector

Contextual Info: BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATIONS . AUDIOAMPLIFIERS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

equivalents transistor bdx53 bdx54

Abstract: BDX54 BDX53 BDX53A BDX53B BDX53C BDX54A BDX54B BDX54C
Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW