BDW94 Search Results

Contextual Info: BDW93CF BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BDW94

Abstract: BDW94C BDW94B BDW94A
Contextual Info: SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW93/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING

BDW93

Abstract: bdw93c applications BDW93C BDW93B BDW93A
Contextual Info: SavantIC Semiconductor Product Specification BDW93/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW94/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING

Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD W 93, BD W 93A, BD W 93B and BD W 93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r E m itter V oltage Sym bol

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit 45 V : BDW93A 60 V : BDW93B

Contextual Info: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl §ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use

diode PR 93A

Abstract: bdw93c bdw93
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • SEPTEM BER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C T0-220 PACKAGE TOP VIEW • 80 W at 25°C Case Temperature

BDW93C

Abstract: bdw93c applications BDW93B BDW94C BDW93C PNP BDW94B malaysia bdw93c
Contextual Info: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

Schottky diode TO220 15A 1000V

Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

BDW94CFP

Abstract: TRANSISTOR bdw93cfp BDW93CFP ST DARLINGTON TRANSISTOR TRANSISTOR bdw94cfp
Contextual Info: BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE

BDW93CFP

Abstract: BDW94CFP BDW 65 C 94CFP
Contextual Info: BDW93CFP BDW94CFP  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE

BDW93

Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

BDW93CF

Abstract: BDW94CF
Contextual Info: BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93CF Respectively 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter

BDW93C

Abstract: BDW93 BDW93A BDW93B BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● SEPTEMBER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

Contextual Info: BDW94 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k

Contextual Info: BDW94C Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k

w94C

Abstract: 93CFI
Contextual Info: bdw93 c f i BDW94CFI SGS-THOMSON iLESMKS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION . COMPLEMENTARY PNP - NPN DEVICES 1 INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S

bdw93c

Abstract: BDW94 BDW93 BDW93A BDW93B BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is currently available, but

bdw93c applications

Abstract: BDW93 npn DARLINGTON 10A BDW93C BDW93B BDW93A
Contextual Info: Inchange Semiconductor Product Specification BDW93/A/B/C Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON ・Complement to type BDW94/A/B/C APPLICATIONS ・Hammer drivers, ・Audio amplifiers applications

BDW93C

Abstract: bdw93c applications BDW94B BDW94C BDW93C TRANSISTOR malaysia bdw93c
Contextual Info: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

93CFI

Contextual Info: SGS-THOMSON [lD i s i[L[l©f[RÎ(ô)iB©i BDW93CFI BDW94CFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . MONOLITHIC DARLINGTON CONFIGURATION . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE