BDW93C Search Results

Contextual Info: BDW93CF BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl §ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use

diode PR 93A

Abstract: bdw93c bdw93
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • SEPTEM BER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C T0-220 PACKAGE TOP VIEW • 80 W at 25°C Case Temperature

BDW93C

Abstract: bdw93c applications BDW93B BDW94C BDW93C PNP BDW94B malaysia bdw93c
Contextual Info: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

BDW94CFP

Abstract: TRANSISTOR bdw93cfp BDW93CFP ST DARLINGTON TRANSISTOR TRANSISTOR bdw94cfp
Contextual Info: BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE

BDW93CFP

Abstract: BDW94CFP BDW 65 C 94CFP
Contextual Info: BDW93CFP BDW94CFP  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE

BDW93

Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

BDW93CF

Abstract: BDW94CF
Contextual Info: BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93CF Respectively 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter

BDW93C

Abstract: BDW93 BDW93A BDW93B BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● SEPTEMBER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

Contextual Info: BDW93C Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750

bdw93c

Abstract: BDW94 BDW93 BDW93A BDW93B BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is currently available, but

93CFI

Contextual Info: SGS-THOMSON [lD i s i[L[l©f[RÎ(ô)iB©i BDW93CFI BDW94CFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . MONOLITHIC DARLINGTON CONFIGURATION . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector

BDW93

Abstract: BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

24ae

Abstract: dw94c DW93 W94B dw94
Contextual Info: SGS-THOMSON RfflDm IILIOra©iDOi BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER _ DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

BDW94

Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C bdw93c applications
Contextual Info: Ü& MOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDW93 BDW93A BDW93B BDW93C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCEO sus = 45 V (Min) - BDW93.BDW94

BDW 65 C

Abstract: BDW93C 94B DIODE BDW94B BDW94C BDW93B bdw93c applications Darlington npn
Contextual Info: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

BDW94CFI

Abstract: BDW93CFI BDW93CF BDW94CF
Contextual Info: BDW93CFI BDW94CFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

BDW 65 C

Abstract: BDW 38 10AHF BDW93CFP BDW94CFP 93CFP 94CFP
Contextual Info: BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE

dw94c

Contextual Info: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT

Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW