BDW93A Search Results

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit 45 V : BDW93A 60 V : BDW93B

Contextual Info: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl §ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use

diode PR 93A

Abstract: bdw93c bdw93
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • SEPTEM BER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C T0-220 PACKAGE TOP VIEW • 80 W at 25°C Case Temperature

BDW93C

Abstract: BDW93 BDW93A BDW93B BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● SEPTEMBER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

bdw93c

Abstract: BDW94 BDW93 BDW93A BDW93B BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and

Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is currently available, but

BDW93

Abstract: BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

Contextual Info: BDW93A Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k

BDW94

Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C bdw93c applications
Contextual Info: Ü& MOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDW93 BDW93A BDW93B BDW93C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCEO sus = 45 V (Min) - BDW93.BDW94

Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

BDW93C

Abstract: BDW93 BDW93A BDW93B BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE TOP VIEW

BOW94C

Abstract: BDW948 BOW94A BDW04
Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright C 1987, Power Innovations Limited, UK SEPTEM BE R 1993 - REVISED M ARCH 1997 • Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C • 80 W at 25°C Case Temperature •

Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • SEPTEM BER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C T0-220 PACKAGE TOP VIEW • 80 W at 25°C Case Temperature

BDW94C

Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and

BDW94

Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C dsa001364
Contextual Info: BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDW93

Abstract: BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: c 2 5 J S J Ï5 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS 11m * T t D TO-220 PACKAGE TOP VIEW Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature o B C C C 12 A Continuous Collector Current

Bow93c

Abstract: BDW930 BUW93 BDW93C 8DW93 B0W93B
Contextual Info: BDW93, BDW93A, BDW93B, BOW93C NPN SILICON POWER DARLINGTONS Copyright o 1997, Power Innovations Limited, UK • Designed or Complementary Use with BDW94, BDW94A, BDW94B and BDW94C • 80 W at 25°C Case Temperature SE P TE M B E R 1993 - REVISED M ARCH 1997

Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is currently available, but

BDW94

Contextual Info: BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Emitter Voltage Collector Emitter Voltage

BDW94C

Abstract: BDW93 BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B
Contextual Info: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● SEPTEMBER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

W9394

Abstract: W93B darlington bd
Contextual Info: r Z 7 SGS-THOMSON “ 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use

transistor BDW94C

Abstract: BDW94 BDW94C
Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS . Complement to BDW93.BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BDW94 Rating -45