L434 Search Results

2sk77

Contextual Info: SANYO S E M I C O N D U C T O R CORP 52E D • 7 cjci7Q7b □ D 0 7 l434 5 ■ FC11 'T - Z l - Z S # 2070_ N-Channel Junction Silicon FET Low-Frequency General-Purpose A m p, Differential Am p Applications F e a tu re s • Adoption of FBET process

xenon lamp

Abstract: srl 5005 windmill design xenon tube windmill xenon arc lamp L4342 150W metal halide lamps METAL HALIDE 150w electron lamp
Contextual Info: SHORT-ARC TYPE METAL HALIDE LAMP 150W L4342/L4342-01 PATENT PENDING 4 Times Higher Luminous Efficiency than Xenon Lamp and Halogen Lamp White, Point Light Source with 7500 K Color Temperature FEATURES ● High Luminous Efficiency : 76 lm/W About 4 times higher luminous efficiency than Xenon lamp

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

L435

Abstract: S558-5999-59 S558-5999-32 S558-5999-69 S558-5999-A2 S558-5999-L1 S558-5999-L5 L-436
Contextual Info: 10/100BASE-T LAN MAGNETICS Low Profile PCMCIA Transformer Modules LM00411 • Low profile, surface mount packaging rated to 225° C peak IR reflow temperature • Meets all IEEE 802.3 standards including 350 µH OCL with 8mA bias • Four low profile package heights ranging from .098"

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

Contextual Info: SIDC06D120F6 Fast switching diode chip in Emitter Controlled Technology Features: • 1200V technology 120 µm chip  soft, fast switching  low reverse recovery charge  small temperature coefficient  qualified according to JEDEC for target applications

LTC4098-3.6

Abstract: l4za BZ2H b34 6ba
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor " $" $ !!!!! !!!!! !!!!!!!!!!!! !!"##$% "/!0 * )$! (%)*! )(, %(3!(3,!/0 !"#$%&''(#)&*#+,%,+*-%.#$)/$$-$%&,%#0'(-0-,*&*#+,%+1%2345%)+,*6+(%(+7#)%*+%8-%/$-.%#,% )+, /,)*#+, :#*"%*"-%5;<=>?@%)+,*6+(-6A%!"-%$B$*-0%/$-$%&%8(+)C%+1%DE@% 8B*-$%+1%345%:"#)"%#$%6-16-$"-.

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

LTC4098-3.6

Abstract: SEH-01T-P0.6
Contextual Info: Freescale Semiconductor, Inc. " $" $ !!!!! !!!!! !!!!!!!!!!!! !!"##$% "/!0 * )$! (%)*! )(, %(3!(3,!/0 !"#$%&''(#)&*#+,%,+*-%.#$)/$$-$%&,%#0'(-0-,*&*#+,%+1%2345%)+,*6+(%(+7#)%*+%8-%/$-.%#,% )+, /,)*#+, :#*"%*"-%5;<=>?@%)+,*6+(-6A%!"-%$B$*-0%/$-$%&%8(+)C%+1%DE@% 8B*-$%+1%345%:"#)"%#$%6-16-$"-.

nec 2561 equivalent

Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

sick wll190T-2P434

Abstract: WLL190T-2P434 WLL190T-2N432 WLL190T-2P432 LL3-TA01 WLL190T-2P532 WLL190T2P434 2e333 WLL190T-2P333 LL3-DB01
Contextual Info: Proximity switch with fibre-optic cables, WLL190T-2, Stand alone, red light Dimensional drawing 76.5 2.6 Scanning range 0 . 4,000 mm 5 ø 4.2 6 20.5 29.5 10 7 57.1 Adjustments possible 1 3 Sender LED, installation of LL3 fibre-optic cable sender fibre

4148C

Contextual Info: EL4146C, L4346C, EL4148C, L4348C A f j f l f mm • i v v HIGH PERFORMANCE AHAL06 IHTEGR ATEf CIRCUITS EL4146C, L4346C, EL4148C, L4348C , 600MHz Multiplexing Amplifiers - Gain of 2 ; ■ Features General Description • 2:1 and 4:1 Mux Available • Single and Triple Channels

bv0T

Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

se617

Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Contextual Info: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents

CMOS-6A

Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Contextual Info: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

Contextual Info: f t w EL4142C, L4342C, EL4144C, L4344C 600MHz, Multiplexing Amplifiers - Gain 0/ J v HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS * • : I Features General Description • 2 : 1 and 4:1 Mux Available The E L 4142C , E L 4342C , E L 4144C , and E L 4344C are 600M H z

D65806

Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s

SIDC06D60F6

Abstract: soft solder die bonding
Contextual Info: SIDC06D60F6 Fast switching diode A Features: • 600V Emitter Controlled technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • power modules and discrete devices C Applications:

transistor f422

Abstract: transistor f423 transistor f422 equivalent F422 F421 F423 L442 F924 uPD65 F324
Contextual Info: DATA SHEET CMOS-8L 3 Volt, 0.5-Micron CMOS Gate Array Description: Features: NEC’s CMOS-8L is an optimized true 3-Volt technology, targeted for applications requiring extensive integration, low power and high speed. The CMOS-8L ASICs are ideal for use in applications like