BV08 Search Results

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

Contextual Info: DATASHEET BV0841 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0841 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications with integrated output terminations providing Zo=100. It can

A15647EE2V0DS00

Abstract: A15402EE1V0UM00 CMOS-9HD ea-9hd number of pins of ARM7 bv08
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD65977S1-xxx-B6 SYSTEM-ON-CHIP LITE GATE ARRAY WITH ARM7TDMI SUBSYSTEM HARDWARE DESCRIPTION The System-on-Chip Lite "SoCLite" is based on standard ASIC technology and consists of two blocks: an ARM7TDMI based subsystem and a sea-of-gates area. The ARM subsystem is fully designed and verified as a

transistor f422 equivalent

Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
Contextual Info: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996

Contextual Info: IRLS540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ bvdss = 100 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ V DS=100V

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
Contextual Info: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

9DBV0841AKILF

Abstract: RW resistor BV0841AIL 9FG432AKLF GEN-12
Contextual Info: DATASHEET BV0841 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0841 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications with integrated output terminations providing Zo=100Ω. It can

bv0T

Abstract: L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: DATASHEET 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER 9 DBV 0 8 3 1 Description Features/Benefits The BV0831 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications. It can also be used for 50M or 125M Ethernet Applications via