F913 Search Results

IRF9130 mosfet

Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
Contextual Info: Rugged Power MOSFETs File N um ber 2220 IR F9130, F9131 F9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated

EL 6N137

Abstract: F9136 f9-136 F 2.2K 302104 6N137 EL 6n137 303141
Contextual Info: Issued November 1988 F9136 Opto-isolators - 6N series Each of the opto-isolators described in this data sheet is a recognised industry-standard' device. Each type has its own place in circuit design for achieving solutions in the fields of isolation and coupling. All types are

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

Microchip vk 1103

Contextual Info: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

Contextual Info: 27LV64 M icrochip 64K 8K x 8 Low Voltage CMOS EPROM DESCRIPTION FEATURES Wide voltage rang« 3.0V to 5.5V High speed performance —200ns maximum access time at 3.0V CMOS Technology for low power consumption — 8mA active current at 3.0V — 20mA active current at 5.5V

TQX6273

Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
Contextual Info: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97

IRHNJ9130

Abstract: DIODE SMD 10A FR001 FR-0016
Contextual Info: SFRC9130S.5B Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ Radiation Tolerant P-Channel MOSFET

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

Matsua relay

Abstract: Matsushita relay relay dc 24V matsushita CH-6343 LKP1aF-24V Matsua Automation Matsushita relay 12V pc Relay Matsushita Matsushita 10A 250 AC MATSUSHITA RELAYS
Contextual Info: LK-P RELAYS 10 A Slim Power Relay FEATURES 24.0 .945 11.0 .433 2 Surge withstand voltage between contact and coil: 10,000V or more 4. High noise immunity realized by the card separation structure between contact and coil 5. Conforms to the various safety

Aromat lr26550

Abstract: Lr26550, Aromat relay pj 906 pj 906 diode APE30105 lr26550 aromat APE10005 Aromat lr26550 relays APE30005 pj 54 diode
Contextual Info: PE-RELAYS THE SLIM POWER RELAY UL-File-No: E43149; VDE-Reg-No: 127819 UG SEMKO-File-No: 99330 99/01; CSA-File-No: LR26550-784 5 .197 • Slim size 28 mm L x5 mm (W)×15 mm (H) 1.102 inch (L)×.197 inch (W)×.591 inch (H) permits high density mounting • Wide switching capacity:

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

a562 transistor

Abstract: transistor A562 d2118 DSP1c D61 6A-1 D2730 transistor D1812 H3C1 A966 transistor power 22E
Contextual Info: Freescale Semiconductor User’s Guide PTKIT8101UG Rev. 1, 9/2005 MSC8101 Packet Telephony Farm Card MSC8101PFC The MSC8101 DSP subsystem on the MSC8101 packet telephony farm card (MSC8101PFC) performs the signal processing functions for voice, fax, and modem data

F-91300

Abstract: D-8012 24LH02 F91300 MASSY
Contextual Info: m i 7 1992 24LH02 M icrochip 2K CMOS Serial EEPROM - High Endurance FEATURES DESCRIPTION • Single supply with operation from 6.0 V down to 2.0 V • Low power CMOS technology — 3 mA active current at 6.0 V — 50 jiA standby current at 6.0 V — 15 jiA standby current at 2.0 V

arcotronics mkp 1.44

Abstract: ARCOTRONICS MKP 1.44 7.5 ARCOTRONICS MKP 1.44 1 ARCOTRONICS MKP 1.44/ A ARCOTRONICS MKP 1.44 2 ARCOTRONICS MKP 1.44 3 arcotronics C94E arcotronics mkp arcotronics mkp 144 arcotronics C94
Contextual Info: Condensatori monofasi Single phase capacitors MKP MKPl SERIE C93 – C93 SERIES Condensatori monofase appositamente progettati per il rifasamento di impianti elettrici di bassa tensione. Realizzati in polipropilene metallizzato, conformi alle norme CEI EN 60831-1/2. Approvati IMQ ed UL.

PICSTART-16C

Abstract: ESC tower pro PICSTART eprom programmer PIC16 example codes PIC16C5X PIC16C64 PIC16C74 PIC16CXX Display Engineering Services
Contextual Info: PICSTART -16C DEVICE PROGRAMMER USER'S GUIDE “Information contained in this publication regarding device applications and the like is intended by way of suggestion only. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information. Use of Microchip’s

RH -12V SDS RELAY

Abstract: RH 24V SDS RELAY DR-5V SDS relay RH 5V SDS RELAY RH 12v SDS relay RH -24V SDS RELAY sds relays Matsushita relay sds dr-12v diode 6lf
Contextual Info: DR HIGHLY RELIABLE MINIATURE DIP RELAYS DR-SDS relay UL File No.: CSA File No.: E48393 LR45064-2 b High breakdown 1500 V and surge (1500 V) voltage between contacts and coil b High sensitivity b High contact pressure Specifications Contacts Characteristics

ba 9759

Abstract: ba 5839 B1967 9749E K976 3F9+trx
Contextual Info: 1 1 439B9BC9 234566789A1 2345667B91 1 C2DC1EFD161C41D1932E3129 1 9 9 1 "$ 14%%1 43997939E !"#$%&'!97149 369 9(43939979BC9 9496*FF9 EF+4(9,77495F637F3-9.E%B//.0119 $42644F947637F99

1RF9130

Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Contextual Info: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id

85C82

Abstract: F-91300 f91300
Contextual Info: 3^-316 85C82 2K 256 x 8 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • • The Microchip Technology Inc. 85C82 is a 2K bit Elec­ trically Erasable PROM The device is organized as 256 x 8 bit memory with a two wire serial interface. Advanced

F-91300

Abstract: 9010 eprom f91300
Contextual Info: fiW l e « « . 27LV128 MIeroohIp 128K 16K X8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance —200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V

bosch servo module SM 10/20

Abstract: BOSCH 0 281 001 527 BCR20R 0 281 003 041 bosch CRB 432 HD6432627 HD6432628 HD64F2628 bosch 0 281 001 494 bosch servo module SM 25/50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

16c71

Contextual Info: MICROCHIP TECHNOLOGY INC blE & T> m blG32Ql 00Q5571 277 • H C H P P IC M icrochip 1 6 C 71 8-Bit CMOS EPROM Microcontroller with A/D Converter CMOS technology FEATURES High Perform ance RISC-like CPU • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for