10ONA Search Results

9127H

Contextual Info: 27HC191 /27HC291 M icrochip 16K 2K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance — 35ns Access tim e available • CMOS technology for low power consumption — 65m A Active current — 10OnA Standby current (low power option)

Contextual Info: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages

d150n

Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

SM 686 16V

Abstract: kc3021 KC3010 KC301 KC3009 400v 15A triac KC3023 100Z KC3012 H11AA1
Contextual Info: 6798580 OPTEK TECHNOLOGY D U A L - IN - LIN E 86D INC PACKAGE 00043 T - w -m ISO LA T O R S T -4 /- # 7 Below listed optoisolators are available in surface mount design, except part numbers KC3009 through KC3023. ~ Specify suffix SMA low profile or 24B (standard profile).

Contextual Info: 004584 *MS FEATURES D E S C R IP T IO N -The A n a lo g ic M N 5 6 2 Series com prises e ig h t pre-aged and stabilized, integrated-etfeu+t— e x te rn a lly re ferenced, 1 2 -b it, d ig ita l-to -a n a lo g con verte rs th a t p ro v id e h ig h -frre c itin n ,.

UC1855B

Contextual Info: UC1855A/B UC2855A/B UC3855A/B y U N IT R O D E High Performance Power Factor Preregulator PRELIMINARY FEATURES DESCRIPTION • Controls Boost PWM to Near Unity Power Factor • Fixed Frequency Average Current Mode Control Minimizes Line Current Distortion

Contextual Info: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.

quint-diode mtbf

Abstract: QUINT-PS-100 CISPR22
Contextual Info: 1-Phase Power Supply, Primary Switch Mode for Use in Potentially Explosive Areas QUINT-PS-100-240AC/24DC/5/EX QUINT POWER provides: • Preventive function monitoring through professional signaling • Global use due to a wide range input • A high level of operational safety even in complex

Contextual Info: y i / i y j x i y n -48V to +5V Output Switching DC-DC Converter _ G eneral Description _ Features The MAX650 is a low -pow er fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 140V,

Contextual Info: D ecem ber 1994 PRELIMINARY Micro Linear M L2652/M L2653 10Base-T Physical Interface Chip GENERAL DESCRIPTION FEATURES The M L 2652 , 1OBASE-T Physical Interface C hip, is a com plete physical interface for tw isted pair and AUI Ethernet applications. It com bines a 10BASE-T M A U ,

Contextual Info: LT1027 TECHNOLOGY Precision 5V R e fe re n c e D C SC ftIPTIO n F€flTUR€S Very Low Drift - 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02 Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs Noise Reduction Pin

Contextual Info: / T u n m _ - TECHNOLOGY i 100MHz Current Feedback Amplifier with DC Gain Control F€flTUR€S DCSCRIPTIOn • Very Fast Transconductance Amplifier Bandwidth: 75MHz The LT1228 makes it easy to electronically control the gain

GES5307

Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)

LM307N

Abstract: ma709 LM307T LM101 LM107T ifr 540 A709 LM10 LM107 LM107F
Contextual Info: Signetics Integrated Circuits - Operational C O N N E C T IO N D IA G R A M LM 107 Series General Purpose Operational Am pl if ier N P AC KA G E IN T R O D U C T IO N The L M 1 0 7 /2 0 7 /3 0 7 is a general purpose in te rn a lly com ­ pensated operational a m p lifie r. Advanced processing

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

D38S1-4

Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

bc156 Transistor"

Abstract: 2n2272 BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

P1027

Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N3901

Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006

2N773

Abstract: U6 em BC127 BC199B BFY47 TF252
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: {Z T SGS-THOMSON JÆ , I M » I [ L I ^ [ M i * T D A 9 1 0 9 /N LOW-COST DEFLECTION PROCESSOR FOR MULTISYNC MONITORS HORIZONTAL • SELF-ADAPTATIVE ■ DUALPLLCONCEPT ■ 150kHz MAXIMUM FREQUENCY ■ X-RAY PROTECTION INPUT ■ l2C CONTROLS : H-POSITION, FREQUENCY

hip4080aib

Contextual Info: HIP4080A PRELIM INARY 80V/2.5A Peak, High Frequency Full Bridge FET Driver December 1994 Features Description Drives N-Channel FET Full Bridge Including High Side Chop Capability The HIP4080A is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available In 20 lead plastic

Contextual Info: / T * 7 7 M , S C S -T H O M S O N « IM ilL Ë O T IM O T D A 9 1 0 5 DEFLECTION PROCESSOR FOR MULTISYNC MONITORS PR ELIM IN A R Y DATA HORIZONTAL DUAL PLLCONCEPT 150kHz MAXIMUM FREQUENCY SELF-ADAPTATIVE X-RAY PROTECTION INPUT DC ADJUSTABLE DUTY-CYCLE