H11AA4 Search Results

Contextual Info: 6 PIN DIP PHOTOTRANSISTOR AC INPUT PHOTOCOUPLER H11AAX Series Features • H11AAX series: H11AA1, H11AA2, H11AA3, H11AA4 • High isolation voltage between input and output Viso = 5000 Vrms • Creepage distance >7.62 mm • Compact dual-in-line package • Pb free and RoHS compliant.

transistor c2307

Abstract: c2307 C2303 C2309 H11AA1 equivalent ST1603 H11AA1 H11AA2 H11AA3 H11AA4
Contextual Info: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AA1 H11AA3 H11AA2 H11AA4 PACKAGE DIMENSIONS DESCRIPTION The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. FEATURES • Bi-polar emitter input

transistor C2089

Abstract: h11aa2
Contextual Info: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 31 H11AA1 H11AA3 H11AA2 H11AA4 DESCRIPTION PACKAGE DIMENSIONS Th e H11AAX family of devices has two GaAs emitters ,Æ> Æ Æ connected in inverse parallel driving a single silicon phototransistor output.

H11AA1 equivalent

Abstract: H11AA1 C2090 AA134 aa134 diode C2089 transistor C2089 j178 diode AA134 "General Instrument"
Contextual Info: GENL INSTR-. OPTOELEK 88 PRELIMINARY DATA SHEET 3810128 0002811 _ GENËRAlf INSTRUMENT 1 f D r - n -S3 O p to c o u p le rs AC INPUT/PHOTOTRANSISTOR ! OPTOCOUPLERS H11AA1 H11AA3 H11AA2 H11AA4 D ESC RIPTIO N PACKAGE D IM E N SIO N S T h e H 11A A X fam ily of devices has tw o GaAs

11AA4

Contextual Info: H llA A l - H11AA4 tSOCOM AC INPUT COUPLED ISOLATOR Ga AS INFRARED EMITTING DIODE & NPN PHOTO-TRANSISTOR PACKAGEDEMENSIONSINCHES MM SCHEMATIC j 44_ .070 (1.78) Typ .100 (2.54) -M Typ -* j 1 *- 1 ! h u.140 (Ì.56)Min (si a t ^¡1/ o Q) (¿) (j .350 (8.89)

Contextual Info: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

E91231

Abstract: H11AA1 H11AA1X H11AA2 H11AA2X H11AA3 H11AA3X H11AA4 H11AA4X
Contextual Info: H11AA1, H11AA2, H11AA3, H11AA4 H11AA1X, H11AA2X, H11AA3X, H11AA4X A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 l CSA recognised, Cert. No. CA 110306-1 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS

H11AA1 equivalent

Abstract: C2303 11AA2
Contextual Info: QUALITY TECHNOLOGIES AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS 1 9 H11AA1 H11AA3 H11AA2 H11AA4 The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. T~ 6.86 6.35 o i _ 8.89 Bi-polar emitter input

H11AA1 equivalent

Abstract: H11AA2 H11AA4 H11AA1 H11AA1-M H11AA2-M H11AA3-M H11AA4-M H11AA4M
Contextual Info: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1-M H11AA2-M H11AA3-M H11AA4-M PACKAGE SCHEMATIC 1 6 BASE 2 5 COLL 3 4 EMITTER DESCRIPTION The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single

Contextual Info: MOTOROLA SEM ICO N D U C TO R TECHNICAL DATA TO VDE UL CSL D ® CSA SETI SEMKO DEMKO BS NEMKO BAflT 6-Pin D IP O ptoisolators A C Input/TVansistor Output H11AA1* H11AA2 [CTR « 20% Min] [C T O s 10% Min] H11AA3 H11AA4* [CTR a 5 0% Min The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of a two Gallium-Arsenide

Contextual Info: Optoisolator Specifications _ H11AA1-H11AA4 Optoisolator AC Input GaAs Infrared Emitting Diodes and NPN Silicon Phototransistor T h e H11AA1 th ro u g h H11AA4 consist o f two gallium arsen id e in fra re d em itting diodes c o n n e c te d in inverse p arallel a n d coupled

Contextual Info: 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER H11AAX Series Schematic Features: • H11AAX series: H11AA1, H11AA2, H11AA3, H11AA4 • High isolation voltage between input and output Viso = 5000 Vrms • Creepage distance >7.62 mm • Compact dual-in-line package

Contextual Info: Î Æ AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS Ï i QPÏOELECTROHICS H11AA1 H11AA3 H11AA2 H11AA4 PACKAG E DIMENSIONS DESCRIPTION The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output.

H11AA1

Abstract: H11AA1-M H11AA2-M H11AA3-M H11AA4-M H11AA4M
Contextual Info: H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

H11AA4X

Abstract: smt a1 transistor H11AA E91231 H11AA1 H11AA1X H11AA2 H11AA2X H11AA3 H11AA3X
Contextual Info: H11AA1, H11AA2, H11AA3, H11AA4 H11AA1X, H11AA2X, H11AA3X, H11AA4X A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 l CSA recognised, Cert. No. CA 110306-1 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS

ES1868

Abstract: HIIAA D45H8 H11AA1 H11AA2 2N5308-D45H8 GE Combination Starter H11AA ac power monitor
Contextual Info: G E SOLI» STATE Dl Optoelectronic Specifications DE|3ñ7SDñl □Oliñb'iñ 4 J T -V /-5 3 AC Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor T he G E Solid State H I IA A I — H I IA A 4 consist o f two gallium arsenide infrared emitting

Contextual Info: Optoisolator Specifications _ H11AA1-H11AA4 Optoisolator AC Input GaAs Infrared Emitting Diodes and NPN Silicon Phototransistor T h e H IlA A l th ro u g h H11AA4 consist o f two gallium arsen id e in fra re d em ittin g diodes co n n e c te d in inverse p arallel a n d coupled

MARKING SMD IC CODE 6-pin

Abstract: diode marking 714 SMD 6PIN IC MARKING CODE marking AAX 714 diode smd H11AAX E214129 H11AA1 H11AA3 H11AA4
Contextual Info: 6 PIN DIP PHOTOTRANSISTOR AC INPUT PHOTOCOUPLER H11AAX Series Features • H11AAX series: H11AA1, H11AA2, H11AA3, H11AA4 • High isolation voltage between input and output Viso = 5000 Vrms • Creepage distance >7.62 mm • Compact dual-in-line package • Pb free and RoHS compliant.

Contextual Info: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor

ST1603

Abstract: H11AA4
Contextual Info: Ll- AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS - OPTOELECTRONICS 1 I i H11AA1 H11AA3 H11AA2 H11AA4 PACKAGE DIMENSIONS DESCRIPTION The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. FEATURES

YI45M

Abstract: H11AA1 H11AA2 H11AA3 H11AA4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11AA1 thru 6-Pin DIP O ptoisolators H11AA4 A C Input/Transistor Output These devices consist of tw o gallium arsenide infrared em itting diodes connected in inverse-parallel, optically coupled to a m onolithic silicon phototransistor detector. They

H11AA1

Abstract: H11AA3 H11AA2 H11AA4
Contextual Info: MOTOROLA Order this document by H11AA1/D SEMICONDUCTOR TECHNICAL DATA H11AA1* H11AA2 H11AA3 H11AA4* GlobalOptoisolator 6-Pin DIP Optoisolators AC Input/Transistor Output [CTR = 20% Min] [CTR = 10% Min] The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–

H11AA1

Abstract: 730A-04 h11aa2
Contextual Info: Jameco Part Number 320434 MOTOROLA Order this document by H11AA1/D SEMICONDUCTOR TECHNICAL DATA H11AA1* H11AA2 H11AA3 H11AA4* GlobalOptoisolator 6-Pin DIP Optoisolators AC Input/Transistor Output [CTR = 20% Min] [CTR = 10% Min] The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–

HIIAA

Abstract: 4 n 608 608 diode optoelectronic ic ge h11a
Contextual Info: G E SOLI » STATE □i »E|3a?5oai Dont^fl Optoelectronic Specification* T-V/-53 A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State H11A A 1 — H 11A A4 consist of two gallium arsenide infrared emitting