74BBFL51 Search Results

MCP3043

Abstract: CZ0BD C1723 MCP3042 MCP3032 ta 8611 C1711 C2090 MCP3033 MGP303
Contextual Info: ÖUALITY TE CHNOLOGIES CORP flfl Î T | 74bbfl51 □ □ □ S ciS3 b 88D 02953 ^GENERAL INSTRUMENT AIGaAs ZERO-CROSSIN G TRIACS ZERO-CROSSING Æ i tS Æ “ 7 15° MAX 1 6.86 .270) 6.35 (.250) 7.62 (.300) REF 0.36 (.014) - , - J 0.20 (.008) 1 8.38 (.330)

1AV3A

Contextual Info: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting

SMD Transistor AFR

Contextual Info: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

HLIK-1

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D 74bbfl51 000ME1E H ä TY O ptoisolator Specifications _ H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H11K series consists o f a gallium -alum inum -arsenide, in frared

Contextual Info: 3UALITY T E CH N OL O GI E S CORP S7E ]> 74bbfl51 □□□430b 55b I ÖTY European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode

QEC121

Contextual Info: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder

Contextual Info: E süi CLEAR LENST-100 SOLID STATE LAMPS OPTOELECTRONICS YELLOW MV5362X TINTED, HLMP-1440, MV5360 PALE TINT HIGH EFFICIENCY GREEN MV5462X TINTED, HLMP-1540, MV5460 PALE TINT HIGH EFFICIENCY RED MV5762X TINTED, HLMP-1340, MV5760 PALE TINT PACKAGE DIMENSION!

Contextual Info: PANEL INDICATORS DPTOELECïROmCS YELLOW M V 53173 HIGH EFFICIENCY GREEN M V 54173 HIGH EFFICIENCY RED M V 57173 DESCRIPTION The MV5X173 series is a large rectangular lamp which contains two LED chips with separate anodes and cathodes for each light. The illuminated area is

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL

Contextual Info: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB86ONI1/OPB860N51/OPB860N55 PACKAGE DIMENSIONS DESCRIPTION SEE NOTE 3 's 1 .125 3.18 _J O P T IC A L C E N TE R LIN E 9 - . 4 8 5 (12.32) The OPB86 ON series of switches is designed to allow the user maximum flexibility in applications. Each switch

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

Contextual Info: 2.0'5x7 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW G M A 2 8 7 5 C HER G M A 2 9 7 5 C GREEN G M A 2 4 7 5 C BICOLOR RED/GREEN PACKAGE DIMENSIONS G M C 28 75 C G M C 2 9 75 C G M C 2475 C G M A 2 6 75 C DESCRIPTION A. GMX2X75C 3 8 .4 i0 .3 _ ' 1.5±.01> o

c1474

Contextual Info: AC LINE MONITOR LOGIC-OUT DEVICE OPTOELECTRONICS 1 MID400 PACKAGE DIM EN SIO N S DESCRIPTIO N The MID400 is an optically isolated AC line-to-logic interface device. It is packaged in an 8-lead plastic DIP The AC line voltage is monitored by two back-to-back

Contextual Info: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021

Contextual Info: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE

smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Contextual Info: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

C1019

Abstract: C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Contextual Info: ÖUALITY TECHNOLOGIE S CORP S7E » • 74t.tflSl QG03bll S ■ I QUALITY TECHNOLOGIES REFLECTIVE OBJECT SENSOR MSA7 OLD PART NO.— MCA7 PACKAGE DIMENSIONS DESCRIPTION PIN 1 IDENTIFICATION The M SA7 optoisolator consists of an infrared emitting diode and a silicon planar photodarlington. The on-axis