74BBFLSL Search Results

Transistor 2TY

Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
Contextual Info: CNX21 ÖUALITY TECHNOLOGIES CORP S7E » • 74bbflSl 0004527 042 ■ ÛTY T ^ H t- HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo­ transistor. The base is not accessible. Features of this product:

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

Contextual Info: ÛUALITY 'TECHNOLOGIES CORP 57E D 74bbflSl 00G3bl7 b ' X. QUALITY TECHNOLOGIES SLOTTED DARLINGTON OPTOSWITCHES TdtklA MSA6530 MSA8530 MSA7530 MSA9530 DESCRIPTION PACKAGE TYPES E □ MSA6530 _SJ e MSA7530 d E D MSA8530 E The MSAXXXX series of optoswitches is designed to

C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Contextual Info: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,

h9762

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D I 74bbflSl □ 0 0 4 2 Ii0 3bT IÖTY European “Pro Electron” Registered Types _ CNX35, CNX36 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNX35 an d CNX36 are gallium arsenide, in frared

H11V

Contextual Info: S7E J> I flUALITY TECHNOLOGIES CORP 74bbflSl 0004232 7t7 O ptoisolator Specifications _ H11V1, H11V2, H11V3 Optoisolator GaAIAs Infrared Emitting Diode and Silicon Integrated Circuit Video Signal Amplifier SEATING PLANE T h e H I IV series consists o f a high-speed gallium -alum inum arsenide, in frared em itting d iode coupled across a glass

bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Contextual Info: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life

Contextual Info: 3UALITY TE CH NOL OGI ES CORP QUALITY TECHNOLOGIES 27E D 74bbflSl QGGHtDS T GaAs INFRARED EMITTING DIODE , . „ _ 7 ^ , MES770 FEATURES PACKAGE DIMENSIONS O u tp u t b e am d iré ctìO Q ^, S p h e r « * 1.S Gallium arsenide infrared LED Side view plastic package

Transistor 2TY

Contextual Info: I I ÛUA LIT Y T E C H N O L O G I E S CORP 57E D 74bbflSl 0 0 0 M S S 2 5TÔ • û T Y A « CNX38U 7 = ^ OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

Contextual Info: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE122/123 Th e Q E E 12X is an 880 nm AIGaAs LED en capsulated in a w ide angle, dark green, plastic sidelooker shell package. a FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder

Contextual Info: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016

Contextual Info: [sia DUAL VERY HIGH-SPEED LOGIC GATE OPTOCOUPLERS OPTOELECTRONICS i _ HCPL-2630 DUAL 10 MBit/s LOGIC GATE HCPL-2631 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2630 and HCPL-2631 dual channel optocouplers have two channels, each consisting of a 700 nm GaAsP LED, optically

c1474

Contextual Info: AC LINE MONITOR LOGIC-OUT DEVICE OPTOELECTRONICS 1 MID400 PACKAGE DIM EN SIO N S DESCRIPTIO N The MID400 is an optically isolated AC line-to-logic interface device. It is packaged in an 8-lead plastic DIP The AC line voltage is monitored by two back-to-back

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

453 optocoupler

Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
Contextual Info: Philips Semiconductors Product specification 7 ^ -V /- High-speed optocoupler flUALITY TECHNOLOGIES SL5505S CORP S7E D 74bb651 0004720 SST • 2TY FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

Contextual Info: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

Contextual Info: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator