4N29A Search Results

4N33 APPLICATION NOTE

Abstract: 4N29 APPLICATION NOTE 4N32A 4N32ASHORT 4n29
Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

4N33 APPLICATION NOTE

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IBA TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE /DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

opto 4N33

Abstract: 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33
Contextual Info: MOTOROLA Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32 1 and 4N33(1) devices consist of a gallium

4N32A

Abstract: 4n33 4N29A DARLINGTON 4N32 4N29 4N30 4N31 4N32 E67349
Contextual Info: TO SH IBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short)# 4N29A(Short)f 4N30(Short)f 4N31 (Short) 4N32(Short)# 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a

Contextual Info: 37E J> HARRIS SEMICOND SECTOR 4302571 G[12713b D B H A S Optoelectronic Specifications — Photon Coupled isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — M IL L IM E T E R S SYVIAJL Ga A s Infrared E m ittin g D io d e & N P N S ilico n P h oto-D arlin gton A m p lifier

4N32A

Abstract: 4N29 4N29A 4N30 4N31 4N32 4N33 E67349
Contextual Info: TOSHIBA 4N29#4N29A#4N30#4N31#4N32#4N32A#4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short)f 4N30(Short)f 4N31 (Short) 4N32(Short)# 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

Contextual Info: TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short), 4N30(Short), 4N31 (Short) 4N32(Short)f 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

4N29

Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.

CNY57A

Abstract: CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b
Contextual Info: Tem ic Semiconductors Cross Reference List Opto Corapetltwn-Type Isolators 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 4N25, 25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N33 4N35 4N37 4N38 CLA7 CLA7AA CNX21 ' CNX35 ; CNX36 CNX38 1CNX82 i CNX83

4n33

Contextual Info: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE ca TO BS ® ® UL CSA SETI SEMKODEM KO NEMKO BABT 4N29 4N29A 4N30* 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t [CTR • 100% Min] 4N 31 {CTR * 50% Min] 4N32* 4N32A* 4N33 The 4N29/A, 4N30, 4N31, 4N32/A and 4N33 devices consist of a gallium arsenide

Opto-isolator

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a

CNY17 III

Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Contextual Info: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196

GE 4N33

Abstract: 4n33 11-7A8 4N29SHORT
Contextual Info: T O SH IB A 4N29/4N29A,4N30,4N31,4N32,4N32A/4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short), 4N30(Short), 4N31 (Short) 4N32(Short), 4N32A(Short), 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

Contextual Info: “û7 MARKTEC H INT ER NA TION AL Mf| 5 7 ^ 5 5 DARLINGTON COUPLER S7996S5 M A R K T E C H INTERNATI O N AL u 87D 00132 QDGDÎ35 fl D 4N29, 4N29A, 4N32, 4N32A GaAs INFRABED EMITTING DIODE & NPN SILICON PHOTO DARLINGTON APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR

transistor 91 330

Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
Contextual Info: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120

GE 4N35

Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
Contextual Info: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e

4n32

Abstract: 4N33 Motorola
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.

Contextual Info: PHOTO-TRANSISTOR 4N29,29A,30,31, 4N32,32A, 33 Short (4 N 2 9 (S h o rt() A C LIN E/D IG ITA L LOGIC ISOLATOR. DIG ITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TW ISTED PAIR LINE RECEIVER. R ELA Y CO N TA CT M ONITOR. The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide

optocoupler crossreference

Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
Contextual Info: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the

MOC3051

Abstract: MOC3051 "cross reference" moc3052 cross reference fairchild tape reel moc3052 MOC3052 "cross reference" parallel triacs triac operation MOC3052 APPLICATION CIRCUITS 4N25 zero CROSS MOC3051FM
Contextual Info: MOC3051 MOC3052 GlobalOptoisolator 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volts Peak The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series

application notes MOC3062

Abstract: inverse-parallel scr drive circuit moc3061 application note moc3063 application note MOC3061-63 MOC3062M 4n25 application note zero crossing pulse MOC3061 optocoupler MOC 4N35 moc3063sm
Contextual Info: MOC3061 MOC3062 MOC3063 GlobalOptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 600 Volts Peak The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors