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ABB Group LE54915BE10PH54915BE 5/8 BOLT WITH PEEP HOLE |
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E54915 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a |
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mocd217/dmocd217 | |
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Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a |
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mocd211/dmocd211 | |
MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+12 | |
MOC119
Abstract: VDE0160 VDE0832 VDE0833 IEC-204
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+6 | |
Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+11 | |
opto d213
Abstract: d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint
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mocd213/dmocd213optoelectronicsmocd213/dopto d213+5 | |
MOCD211
Abstract: D211 RS481A motorola opto coupler
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mocd211/dmocd211optoelectronicsmocd211/dd211+2 | |
MOC221
Abstract: MOC223 RS481A soic8 footprint motorola silicon dual diode common cathode MOC221 MOTOROLA
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moc223/dmoc223moc221rs481a+3 | |
UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
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semi260ty510ty6004ty6008+14 | |
triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
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sg73/dtriac zd 6071n5204ca2820 trw+7 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6 | |
MOC256
Abstract: MOC256M
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oc256/dmoc256e54915rs481s+1 | |
MOC205
Abstract: OC206
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rs481amoc205oc206 | |
motorola h11l1Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA 6-P in D IP O p to is o la to rs Logic Output . . . g a lliu m arsen id e IRED o p tic a lly c o u p le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lica tio n s re q u irin g e le c tric a l is o la tio n , fast |
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h11l1motorola h11l1 | |
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VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
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rs481acd207mocd208vqe 22 led+3 | |
C8050
Abstract: C3050
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e5491530a-02c8050c3050 | |
aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+11 | |
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Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector. |
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+2 | |
MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
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b3b7255mqc8060/de54915c13s0+8 | |
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Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP |
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+2 | |
VDE-0883Contextual Info: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector. |
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+2 | |
D217 OPTO
Abstract: MOCD217 opto D217
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mocd217rs481ata-25d217 opto+1 | |
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Contextual Info: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n |
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e54915iec380/vde0806iec435/vde0805iec65/vde0860+1 | |
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Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica |
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h11b1h11b2h11b3e54915+4 | |