VDE0883 Search Results

TLP639

Abstract: TLP639-F TLP639F VDE-0110
Contextual Info: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,

MOC3001

Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

k 6115

Abstract: dc to dc Optoisolator Optoisolator MOC8080 VDE0160 VDE0832 VDE0833 IEC-204
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6-Pin D IP O p to iso lato r High Tem perature D arlington O utput • • • • • • Convenient Plastic Dual-ln-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature

MOC8020

Abstract: MOC8021 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA M O C8020 MOC8021 6-Pin DIP Optoisolators Darlington Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high sensitivity at low input

Y14SM

Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.

Contextual Info: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

c3212

Abstract: AD261 AD261AND-0 AD261AND-1 AD261-5 F12S1
Contextual Info: a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz min CMV Transient Immunity: 10 kV/␮s min Waveform Edge Transmission Symmetry: ؎1 ns Field and System Output Enable/Three-State Functions

C8050

Abstract: C3050
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.

MOC8060

Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter

Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP

VDE-0883

Contextual Info: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector.

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

ad261

Abstract: AD2611 AD2610 ND-22A
Contextual Info: BACK a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz min CMV Transient Immunity: 10 kV/␮s min Waveform Edge Transmission Symmetry: ؎1 ns Field and System Output Enable/Three-State Functions

HCPL 601

Abstract: optocoupler ic 6N136 OPTOCOUPLER 687 Optocoupler 601
Contextual Info: High-Speed Logic Gate Optocouplers Withstand Test Typical Device 3 Vcc TjVour 6] Vf H gnd Œ »N O D E [2 C A THO DE [3 a Description HCPL-2200 HCPL-2219 Application 3 Slate Output Low High Speed Logic Input Current Ground Isolation, Optically Coupled LSTTL, TTL, CMOS

C3883

Abstract: GE H11D2 verin VDE0833 H11D1 GE
Contextual Info: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page

TLP635F

Abstract: TLP635 TLP636 TLP636F TLP635-F VDE0110 VDE-0110 VDE0804 VDE-0883 VDE0750T1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP635F, 636F TENTATIVE DATA Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP635F and TLP636F consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead

TLP741G

Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741G Unit in mm Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

MOTOROLA OPTOELECTRONIC ic pin diagram

Abstract: triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator
Contextual Info: Optoelectronic Devices In Brief . . . Motorola’s families of optoelectronic components encompass red and infrared GaAs emitters and silicon detectors that are well matched for a variety of applications. Optoisolators Motorola’s “Global” 6–Pin Dual In–line Package DIP

TLP735

Abstract: TLP735F tlp736f TLP736 TLP 736F VDE0860 tlp 357 HJ 358 TLP73 p736
Contextual Info: TO SHIBA SEMICONDUCTOR TO SIIiBA PHOTO C UP LE R TLP735F, TECHNICAL DATA TENTATIVE TLP736F (inAs IRED & PHOÏO-TRANSISTOR DATA Un i t in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP735F and TI.P7 >0P consist of a

LM2524

Abstract: C3031 AD2603 AD2604 6f321 f422 Diode in5819 AD260 AD260AND-0 AD260AND-1
Contextual Info: a FEATURES IsoLogic Circuit Architecture Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz Min , 40 mbps (NRZ) Isolated Power Transformer: 37 V p-p, 1.5 W Max CMV Transient Immunity: 10 kV/␮s Min