H11B1 Search Results

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11BX

Abstract: CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 MOC8080 TIL113
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

E91231

Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
Contextual Info: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18

PS2004B

Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
Contextual Info: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11B1

Abstract: H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

Contextual Info: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR M in im u m at l F = 1 m A H 1 1 B 1 ,500% H11 B 2 ,2 0 0 % PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm I?1 Ù ] f?l Anode [ E .248(6.30) 256 (6.50) J D Base i Cathode (~2 _ J H 1 1 B 3 ,100%, * W ith s ta n d T e s t V o lta g e , 7500 V o lt

Contextual Info: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Lead Pb -free component A 1 6 B C 2 5 C NC 3 4 E • Component in accordance to RoHS 2002/95/EC

optocouplers 501

Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

FF 030 PK

Abstract: led ir Darlington pair IC schematic 4n33 schematic H11B1 H11G1 H11G2 H11G3 H24B1 H24B3
Contextual Info: ISOCOM COMPONENTS Photo Darlington With Base Lead Part N u m b er Fea tu res Iso la tio n V o lta g e VDC C u rren t T ra n s fe r R a tio M in % H11B1 M C A255 IS662 Ir = lO fiA M a x (V ) (D ark) VcE(Sat) M ax (v) V ce = 1 0 V ( lc = ( lc = 1000 1m A )

H11B1

Abstract: H11B2 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

optocoupler H11b1

Abstract: H11B1 H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

H11B1

Abstract: H11B2 H11B3
Contextual Info: g y, , H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at Ip = 1.0 mA H11 B1, 500% H11 B2, 200% H 1 1 B 3 ,100% • Isolation Test Voltage, 5300 V RMS D im ensions in inches mm pin one ID lai 121 Î .248 (6.30) .256 (6.50) • Coupling Capacitance, 0.5 pF

IL074

Abstract: VDE-0806 VDE0660 Deutsche Post IEC435 VDE0804 SFH611 IL300G IEC380 VDE0806
Contextual Info: SS D 5-31 4N25/26/27/28 H or J X 4N32/33 H or J X 4N35/36/37 H or J X 6N135/136 H X X 6N138/139 H X X BRT11/12/13 H or J X BKT21/22/23 H or J X CNY17/CNY17F H or J X H11A1/2/3/4/5 H or J X H11AA1 H X H11B1/2/3 H or J X H11C4/5/6 Hor J X H11D1/2/3 H or J X

EL4N33

Abstract: H11BX 4N33 4N32 4n33 schematic 4N31 H11B1 4N29 4N30 E214129
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

h11b255

Abstract: CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES

optocoupler H11A

Abstract: optocoupler H11B H11d optocoupler il420 MCT6 opto h11c optocoupler 4n35 optocoupler AAB1 lh1502 AB LH1546
Contextual Info: Optocoupler Option 1 Option 1 Optocouplers for Safe Electrical Insulation per DIN VDE 0884* These optocouplers are suitable for safe electrical insulation only within the safety maximum ratings. Compliance with the safety maximum ratings must be ensured by protective circuits.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

b13s7

Contextual Info: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V