10JIA Search Results

3SK103

Abstract: 3SK104V 3SK104
Contextual Info: - 232 - - 0 S F E T ii a & Ä J5 9 3 SK 1 0 3 B ü È ö 'S fé m 5 Efètt * « 'J ' mm 10. 00 15.00 Vg2s =3V, i d=10jiA, f =1kHz ft * « * 15 i 10 lY f s l a S CATV 3 ' S K - 9 Is t IF M o -b I o(mA) 35 Ciss(pF) 2.00 Vg2s=3V,Io-lOmA, f=lMHz » y - m m v t s iF is fs s io

ccd diode

Abstract: QS74LCX16823
Contextual Info: [fl q^ity HighSpeed CMOS3.3V 18-Bit Register qs74lcxi6823 S e m i c o n d u c t o r ,In c . DESCRIPTION FEATURES/BENEFITS • 5V tolerant inputs and outputs • 10jiA lCCQ quiescent power supply current • • • • • • • Hot insertable 2.0V-3.6V Vcc supply operation

Contextual Info: Quality High Speed CMOS 3.3V 18-Bit Registered Transceivers t S emiconductor , I nc . qs 74l c x i 66oi FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Industry standard pinouts • 10jiA lCCQ quiescent power supply current • Hot insertable

Contextual Info: Quality S emiconductor , I nc . Highspeed CMOS3.3V 18-Bit Registered Transceivers QS74LCX16600 FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Industry standard pinouts • 10jiA ICC q quiescent power supply current • Hot insertable

628A

Abstract: 15A10
Contextual Info: Bridge Rectifiers, cenerai Purpose Continued vf m a x @ if Ir MA X VRRM 1.1V @ 2.0A 1.1V @ 3.14A 1.1V @ 1.5A 1.1V @ 3.0A 1.1V @ 6.28A 1.1V @ 3.0A 10jiA 10fxA 10(iA 10nA 10(iA 10(xA 175 Centrar Sem iconducto r Corp.

Contextual Info: Advanced IR F W /I8 4 0 A P o w e r M O SFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ~ ■ Lower Input Capacitance lD = 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10jiA (M ax.) @ VOS = 500V

a1t diode

Contextual Info: Advanced Power MOSFET S F W FEATURES • ■ ■ ■ ■ ■ /I9 6 4 4 BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10jiA M ax. @ VOS= -250V

Contextual Info: calocflc CO RPO RATIO N \J CLM185-1.2/CLM285-1.2/CLM385-1.2 FEATURES • • • • ORDERING INFORMATION Tight Tolerance. 1%-2% Operating Current. 10jiA - 20mA Dynamic Impedance. m

Contextual Info: íf ! H A R R ICL7663S IS S E M I C O N D U C T O R CMOS Programmable Micropower Positive Voltage Regulator March1994 Features Description • Guaranteed 10jiA Maximum Quiescent Current Over All Temperature Ranges The ICL7663S Super Programmable Micropower Voltage

320E2

Contextual Info: ¡g qu autv Q ualh High Speed CMOS 3.3V QS74LCX16827 20-Bit Buffer S emiconductor . I nc . FEATURES/BENEFITS • • • • • • • • • • • • • DESCRIPTION 5V tolerant inputs and outputs 10jiA lCCQ quiescent power supply current Hot insertable

UM61L3232AF-7

Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
Contextual Info: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

C1026

Abstract: 1026 soic-8 IC 1026 X9116WM8I-2.7T1
Contextual Info: ¡eluom Semiconductor, Inc. PRELIMINARY INFORMATION TC1026 LINEAR BUILDING BLOCK - LOW POWER COMPARATOR WITH OP AMP AND VOLTAGE REFERENCE FEATURES GENERAL DESCRIPTION • T he T C 1026 is a m ixed-function device com bining a general purpose opam p, co m p a ra tor and voltage reference

Contextual Info: Supertax inc. DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdsx/ R d s o n b v dgx (max) (min) TO-92 Die 240V 4.0£2 600mA DN2624N3 DN2624ND •d s s Advanced DMOS Technology Features □ High input impedance

OD-669

Abstract: AT25 diode b33
Contextual Info: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for

87CS2

Abstract: 8052 microcontroller philips kje t2 80C32 Philips P80C32 P80C52EBA P87C52GFFFA KJe ro 80C51 80C52
Contextual Info: SbE ]> PHILIPS INTERNATIONAL m 711QöSb 003Ö7ÖÖ 775 » P H I N Product specincation Philips Semiconductors Microcontroller Products 80C32/80C52/87C52 CMOS single-chip 8-bit microcontroller T FEATURES • 80C51 based architecture In addition, the 8XC52 has two software

TPS2010

Abstract: TPS2010D TPS2010PWLE TPS2011 TPS2011D TPS2012 TPS2013
Contextual Info: TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SWITCHES SLVS097 - DECEMBER 1994 D PACKAGE TOP VIEW 95-m a Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection GND [ 1 IN [ 2 IN [ 3 IN [ 4

DK52

Contextual Info: IS0809 B U R R - B R O W N Isolated 16-Bit Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz SAMPLING RATE The IS0809 is a low-power isolated sampling ADC using state-of-the-art CMOS structures and high volt­ age capacitors. The IS0809 contains a complete 16-bit

Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION v IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance Low Leakage

Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-323 - * \ , h -A TO P VIEW B C 1 Mechanical Data_

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-571B Z 3rd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 0. 2 ß typ. (VGS = 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2980

Contextual Info: Bridge Rectifiers, General Purpose Single Phase, Full Wave 1.0 to 35 Amperes 100 to 1000 Volts 1.5 1.0 10 AMPS @TA(°C) 2.0 50 50 75 50 50 55 50 50 30 50 50 60 @ Tc (°C) IFSM (AMPS) Jm 1 # CASE DIP SMDIP CASE B-M CASE A CASE B-M CASE A 3N247-M CBR1-010

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

Contextual Info: Or, Call Customer Service at 1-8B0-548-S132 USA Only Optically-Coupled Linear ISOLATION AMPLIFIER FEATURES APPLICATIONS • EASY TO USE, SIMILAR TO AN OP AMP Vqu^Im = Rf, Current Input Vom/V* = FVR«, Voltage Input • 100% TESTED FOR BREAKDOWN: 750V Continuous Isolation Voltage